Flow channel adjustable reaction cavity device for thin film prepared by MOCVD

Abstract

The invention discloses a flow channel adjustable reaction cavity device for a thin film prepared by MOCVD. The flow channel adjustable reaction cavity device comprises a heater, an adjustable spray head, an angle adjustable cold wall and elastic sealing pieces; the angle adjustable cold wall is arranged above the heater; the adjustable spraying head is arranged on one side of the angle adjustable cold wall; the elastic sealing pieces are arranged between the adjustable spraying head and the angle-adjustable cold wall and the heater; a flow direction outlet is formed between the other side part of the angle-adjustable cold wall and the heater; a heater shell is arranged outside the heater; and a single-ended opening space is formed among the adjustable spray head, the heater, the heater shell, the angle adjustable cold wall and the elastic sealing piece. According to the scheme, due to the fact that the adjustable spraying head does not directly face the heater and a substrate base band, the temperature rise is small, and the adjustable spraying head can be arranged in a short distance; the gas diffusion space is small, and the utilization rate of a metal organic source is improved, and the cost is reduced; and the angle and the distance of the adjustable spray head and the angle adjustable cold wall can be adjusted, and the uniformity of thin film deposition can be conveniently adjusted.

Description

technical field [0001] The invention relates to a gas reaction chamber device used in metal organic source chemical vapor deposition (MOCVD), which can be used for the preparation of YBCO superconducting strips. Background technique [0002] Metal-organic Chemical Vapor Deposition (MOCVD for short) is a thin-film vapor-phase epitaxial growth technology developed on the basis of vapor phase epitaxy (VPE), and is widely used in groups III and II Organic compounds of elements and gaseous raw materials containing V and VI elements are used as source materials for vapor deposition. After transportation, diffusion and surface chemical reactions, III-V or II-VI compound semiconductors are grown on high-temperature substrates. and thin-layer single-crystal materials of their multicomponent solid solutions. The MOCVD method has a wide range of applications, and can grow almost all compounds and alloy materials; it can realize rapid deposition of large-area uniform thin films, and ha...

AI Technical Summary

Problems solved by technology

If the gas shower head is very close to the substrate (for example, 10mm), it is easy to cause a reactive deposition film on the shower head due to overheating

If such a situation occurs, it will further affect the composition of the deposited film on the substrate, and may also cause blockage of the shower head, resulting in unstable production

However, if it is placed far away from the substrate (such as 300mm) in order to reduce the temperature of the shower head, it will affect the deposition rate, reduce the utilization rate of raw materials, and lead to an increase in cost

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