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Method for dry etching mask layer without oxidizing memory cells and source lines

A technology for memory cells and source lines, applied in coatings, electrical components, solid-state diffusion coatings, etc., can solve problems such as increasing the resistivity of source lines, complex structures, and processing integration solutions

Inactive Publication Date: 2020-01-14
SONY SEMICON SOLUTIONS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this increases the resistivity of the source line and requires a more complex and expensive structure and process integration scheme

Method used

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  • Method for dry etching mask layer without oxidizing memory cells and source lines
  • Method for dry etching mask layer without oxidizing memory cells and source lines
  • Method for dry etching mask layer without oxidizing memory cells and source lines

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Embodiment Construction

[0019] Exemplary embodiments of the present invention relate to methods for dry stripping without oxidation of cells and source lines. According to one embodiment, a typical damascene flow is augmented with a fluorine-based plasma step applied in a dry stripping process. Fluorine reacts with cell and source line (e.g. copper cell and copper source line) materials to form thin copper fluoride (CuF X )membrane. The copper fluoride film protects the copper cell and copper source line material from oxidation during the oxygen plasma based carbon stripping process.

[0020] In typical damascene processing techniques, a dielectric layer, typically an oxide, commonly referred to as an intermetal dielectric (IMD), is deposited over the semiconductor surface. The oxide layer is polished to obtain a flat top surface. A series of well-known processing steps are then performed to form interconnects between the various metal layers. Damascene processing allows the formation of small, c...

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Abstract

Various embodiments of the invention relate to methods of passivating metal lines (300, 301, 302, 310), such as memory cells and metal lines of a CBRAM, to prevent oxidation of the metal lines prior to removing the mask layer (106). The method includes exposing a metal line, such as copper, and reacting the metal line with a fluorine-based etchant to form a protective film of CuFx (400).

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. priority patent application US14 / 283893, filed May 21, 2014, the entire contents of each of which are incorporated herein by reference. technical field [0003] Certain embodiments of the present disclosure relate to methods of dry stripping without oxidation of cells and source lines. Background technique [0004] Multimetal films are being actively explored as an alternative storage technology. Copper CBRAM (Conductive Bridge Random Access Memory) cells are being developed using both subtractive and damascene process flows. The CBRAM damascene flow utilizes patterning of carbon, deposition of CBRAM cells and copper source lines, followed by a chemical mechanical planarization (CMP) process and carbon stripping. During the conventional carbon stripping process, the copper surfaces in the source lines and cells are exposed to oxygen plasma and are thus severely oxidized, co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/311H01L21/321H01L21/768C23C8/04C23C8/08H01L45/00
CPCC23C8/04C23C8/08H01L21/02063H01L21/02074H01L21/31122H01L21/321H01L21/76814H01L21/76885H10N70/011H10N70/245H10N70/823H10N70/881H10N70/061
Inventor K·阿克塔尔A·杜塔A·J·施里恩斯基S·J·特拉普
Owner SONY SEMICON SOLUTIONS CORP