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Forming method of photoresist pattern

A photoresist and graphics technology, which is applied in the direction of photoplate making process, optics, and optomechanical equipment on the patterned surface, can solve the problems of increased difficulty and achieve the effect of stable shrinkage and improved line roughness

Active Publication Date: 2019-04-26
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

This also determines the method of using RELACS reagents to reduce the critical size, and the size of the reduction in different regions will be quite different, which will increase the difficulty of subsequent Optical ProximityCorrection (OPC)

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  • Forming method of photoresist pattern
  • Forming method of photoresist pattern

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Embodiment Construction

[0029] Since in the prior art, the chemical shrinkage technique performed by RELACS reagent is restricted by the distribution of photoacid, the size of shrinkage has a strong correlation with the concentration of photoacid. The patterned photoresist has a high photoacid concentration in the pattern-intensive area, and a low photoacid density in the pattern-free area, which also determines the method of using the RELACS reagent, and the reduced size will have a large difference. Therefore, the difficulty of Optical Proximity Correction (OPC) increases. Therefore, the inventor has proposed a method for forming a photoresist pattern after research, and the method for forming includes: forming a patterned photoresist; coating a methacrylic resin on the surface of the patterned photoresist and baking the patterned photoresist coated with methacrylic resin, so that part of the patterned photoresist reacts with the methacrylic resin, thereby forming A cross-linked layer is formed on...

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Abstract

Disclosed is a formation method for a photoresist pattern. The formation method comprises the specific steps of forming patterned photoresist; coating the surface of the patterned photoresist with methacrylic acid type resin; baking the patterned photoresist coated with the methacrylic acid type resin to enable a part of the patterned photoresist to be reacted with the methacrylic acid type resin so as to form a cross-linking layer on the surface of the patterned photoresist. The dimensional enlargement degree of the patterned photoresist can be accurately controlled, so that the contraction degree of the critical dimensions of a corresponding structure is stable and controllable.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a method for forming a photoresist pattern. Background technique [0002] With the continuous development of semiconductor integrated circuit technology, the size of semiconductor devices is continuously reduced, and the integration density is also continuously increased. How to obtain high-quality devices with small critical dimensions (Critical Dimension, CD) is a current research hotspot and future development trend of semiconductors. [0003] The prior art discloses a chemical shrinking technology, which reduces the critical dimension of a hole or trench by using a Resolution Enhancement Lithography Assisted by Chemical Shrink (RELACS) reagent. The basic principle of this method is that under the action of photoacid on the surface of the patterned photoresist, the macromolecule in the RELACS reagent and the crosslinking molecule undergo a crosslinking reaction, and t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027G03F7/00
CPCG03F7/00H01L21/0273
Inventor 王辉
Owner SEMICON MFG INT (SHANGHAI) CORP
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