Supercharge Your Innovation With Domain-Expert AI Agents!

Heat dissipation bottom plate for IGBT and manufacturing method thereof

A technology of a heat dissipation base plate and a manufacturing method, which is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of product scrapping, easy delamination and falling off, etc.

Active Publication Date: 2017-03-08
BYD CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For the existing heat dissipation bottom plate for this IGBT, when the production is completed or during long-term use, the aluminum layer on the outer periphery of the heat dissipation bottom plate body 1 and the aluminum layer 3 on the inner periphery of the mounting hole 2 are easy to delaminate and fall off, which will cause Product scrap

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heat dissipation bottom plate for IGBT and manufacturing method thereof
  • Heat dissipation bottom plate for IGBT and manufacturing method thereof
  • Heat dissipation bottom plate for IGBT and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Specific embodiments of the present invention will be described in detail below. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0033] In the present invention, in the case of no contrary description, the used orientation words such as "inner and outer" refer to the inner and outer relative to the outline of each component itself, and it is particularly important to note that the "inner and outer" in this application "Inner perimeter" and "outer perimeter" are not limited to rounded edges.

[0034] The present invention provides a heat dissipation bottom plate for IGBT. The heat dissipation bottom plate for IGBT includes a heat dissipation bottom plate body 1. The heat dissipation bottom plate body 1 is provided with mounting holes 2. The heat dissipation bottom plate for IGBT also includes a heat dissipation bottom plate body 1. T...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a heat dissipation bottom plate for an IGBT. The heat dissipation bottom plate for the IGBT comprises a heat dissipation bottom plate body, wherein a mounting hole is formed in the heat dissipation bottom plate body. The heat dissipation bottom plate for the IGBT also comprises an aluminum layer arranged on the outer surface of the heat dissipation bottom plate body in an adhered manner; and grooves are formed in the outer periphery of the heat dissipation bottom plate body and the inner periphery of the mounting hole respectively. According to the heat dissipation bottom plate for the IGBT disclosed by the invention, due to the arrangement of the grooves, the aluminum layer arranged on the outer surface of the heat dissipation bottom plate body is unlikely to fall off; and moreover, the invention also provides a manufacturing method of the heat dissipation bottom plate.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a heat dissipation bottom plate for an IGBT and a manufacturing method thereof. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a composite full-control voltage-driven power semiconductor device. Al / SiC (aluminum silicon carbide) composite material is a new type of IGBT heat dissipation material. Its expansion coefficient is very close to that of the IGBT chip, its density is only one-third of that of copper, and its thermal conductivity is as high as 200W, which is very suitable for the high voltage of electric vehicles. High-power IGBT modules require heat dissipation baseplates. [0003] figure 1 and figure 2 Shown is a heat dissipation bottom plate for IGBT, which includes a heat dissipation bottom plate body 1, and a mounting hole 2 is arranged on the heat dissipation bottom plate body 1. The outer peripheral edge...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367
Inventor 林信平张伟锋徐强邵长健
Owner BYD CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com