IGCT (Integrated Gate Commutated Thyristors) based three-level module
A technology of commutating thyristors and integrated gates, which is applied in the direction of converting AC power input to DC power output, electrical components, and output power conversion devices. It can solve problems such as vibration in the field environment and size limitations of inverter units, and achieve The circuit direction is clear, the layout is simple, and the effect of reducing stray inductance
Inactive Publication Date: 2017-03-08
CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST
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Problems solved by technology
[0004] With the gradual development of offshore wind power and large-tonnage ships, the technical level has increased the demand for medium-voltage frequency conversion solutions. The characteristics of IGCT medium-voltage frequency converters in terms of power and electric energy transmission make it a good choice for offshore wind power and large-tonnage ships. Application prospects, however, the space of the field environment of the two industries is small, there are strict restrictions on the size of the inverter unit, and the field environment is accompanied by vibrations and other phenomena, therefore, a compact three-level module is designed to reduce the existing frequency converter The size of the unit and the improvement of the reliability of the module operation are of great significance
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[0033] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure, features and effects of the present invention will be described in detail below in conjunction with the accompanying drawings and preferred embodiments.
[0034] figure 1 A circuit topology diagram of a three-level module based on an integrated gate commutated thyristor provided for an embodiment of the present invention. Such as figure 1As shown, the three-level circuit corresponding to the three-level module based on the integrated gate commutated thyristor in the embodiment of the present invention includes the first phase 11, the second phase 12 and the third phase 13, so it can be used as a three-phase rectification unit or The three-phase inverter unit is used, the first phase 11, the second phase 12 and the third phase 13 have the same power components and the same circuit structure, and th...
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An IGCT based three-level module comprises a first phase module, a second phase module, a third phase module and and press mounting device; the press mounting device comprises a press mounting assembly and a press mounting frame; the first, second and third phase modules are press-mounted in the press-mounting frame successively along the height direction of the press-mounting frame; IGCT in the first, second and third phase modules form a first press-mounting string along the height direction of the press-mounting frame; freewheeling diodes in the first, second and third phase modules form a second press-mounting string along the height direction of the press-mounting frame; and intermediate-point clamp diodes and absorber diodes in the first, second and third phase modules form a third press-mounting string along the height direction of the press-mounting frame. The three-level model can reduce the total size of a three-phase rectification or inversion unit effectively.
Description
technical field [0001] The invention relates to the technical field of power electronics, in particular to a three-level module based on an integrated gate commutation thyristor. Background technique [0002] Integrated Gate Commutated Thyristors (Integrated Gate Commutated Thyristors, IGCT) is a power semiconductor device with high efficiency and high reliability, which is developed from Gate Turn-off Thyristors (GTO). IGCT is a gate turn-off thyristor (GTO) when it is turned on, and a transistor when it is turned off. It has fast switching speed of transistor, low switching loss and low conduction loss of thyristor, high blocking voltage and large output current Therefore, it integrates the high-speed switching characteristics of an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) and the high blocking voltage and low conduction loss characteristics of a GTO. [0003] The neutral point clamp (Electro-magnetic Interference, NPC) three-level circu...
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Login to View More IPC IPC(8): H02M7/487
CPCH02M7/487
Inventor 马振宇刘建平刘少奇许峻峰肖磊胡惇罗凌波周伟军邹扬举
Owner CSR ZHUZHOU ELECTRIC LOCOMOTIVE RES INST