High-speed digital switch based on bipolar-type semiconductor triode
A digital switch and semiconductor technology, applied in the field of electronic communication, can solve problems such as communication failure, abnormality, and damage to the integrated digital gate circuit, so as to improve the flexibility and applicability of use, save the occupied area, and eliminate the control signal or the effect of the requirements of the control signal voltage
Inactive Publication Date: 2017-03-08
BEIJING BONA ELECTRIC CO LTD
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Problems solved by technology
The traditional implementation method is to use an integrated digital gate circuit, but the biggest limitation of the existing integrated digital gate circuit is that the amplitude of the control signal and the controlled signal cannot exceed the power supply voltage of the integrated digital gate circuit, otherwise, it is easy to cause the integrated digital gate circuit The circuit is damaged or not working properly, resulting in the failure of communication
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Embodiment 1
[0019] like figure 2 As shown, the high-speed digital switch based on the bipolar semiconductor transistor of the present invention is applied to the clock switch control of the ISO7816 interface, wherein both the control signal and the controlled signal are at 5V level.
[0020] The IC card interface of the smart energy meter is a smart card interface that conforms to the ISO7816 standard. In the smart energy meter, the main controller needs to communicate with two ISO7816 interfaces, one is an ESAM chip, and the other is a smart card chip. But the main controller usually can only generate one 1-5MHz clock to supply the two interfaces, and the smart card chip needs to turn off all signals including the power supply after the operation is completed. When utilizing the high-speed digital switch based on the bipolar semiconductor triode described in the present invention to control the clock signal, the clock input terminal is communicated with the ESAM chip, the clock output ...
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The invention discloses a high-speed digital switch based on a bipolar-type semiconductor triode. The high-speed digital switch comprises a main switch circuit and a resistor. The main switch circuit comprises a first bipolar-type semiconductor triode, and a silicon switch diode connected between the collector and the emission electrode of the first bipolar-type semiconductor triode. The high-speed digital switch also comprises a control signal level converting circuit connected to the main switch circuit. The control signal level converting circuit comprises a second bipolar-type semiconductor triode and an adjusting resistor connected to the base electrode of the second bipolar-type semiconductor triode. The bipolar-type semiconductor triodes are used for controlling the on-off processes of the main switch circuit, so control requirements on a control signal and a to-be-controlled signal with different amplitude are achieved; control cost is reduced; occupation area of a PCB is reduced; utilization flexibility and applicability are remarkably improved; and the high-speed digital switch is especially suitable for communication control on an IC card port of an intelligent ammeter.
Description
technical field [0001] The invention relates to a digital switch circuit, in particular to a high-speed digital switch based on a bipolar semiconductor triode with a wide control range and strong practicability, belonging to the technical field of electronic communication. Background technique [0002] In the field of electronic communication technology, many digital circuits need to switch and control digital signals to facilitate the transmission of communication information. The traditional implementation method is to use an integrated digital gate circuit, but the biggest limitation of the existing integrated digital gate circuit is that the amplitude of the control signal and the controlled signal cannot exceed the power supply voltage of the integrated digital gate circuit, otherwise, it is easy to cause the integrated digital gate circuit The circuit is damaged or not working properly, resulting in the failure of normal communication. [0003] In order to improve t...
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IPC IPC(8): H03K17/567H03K17/60
CPCH03K17/567H03K17/60
Inventor 于立华张健周兴涛胡昌盛王加英王化芬
Owner BEIJING BONA ELECTRIC CO LTD