Thin film transistor array substrate and manufacturing method thereof

Abstract

The invention provides a thin film transistor array substrate and manufacturing method thereof. According to the thin film transistor array substrate, a current conduction direction of a channel of a display area TFT is vertical to an ELA laser scanning direction, so that crystal grain arrangement of the channel of the display area TFT in the current conduction direction is relatively unordered, and off-state current of the display area TFT is reduced, so that the display area has a relatively good potential maintaining capability; at the same time, a current conduction direction of a channel of a driving circuit area TFT is parallel to an ELA laser scanning direction, so that crystal grain arrangement of the channel of the driving circuit area TFT is relatively ordered in the current conduction direction, and off-state current of the driving circuit area TFT is improved, thereby improving the field mobility and output current characteristic of the driving circuit area; and the thin film transistor array substrate provided by the invention can satisfy different characteristic requirements of the display area TFT and driving circuit area TFT, thereby improving an overall display effect of a display panel.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor array substrate and a manufacturing method thereof. Background technique [0002] Thin Film Transistor (TFT for short) is currently the main component in Liquid Crystal Display (LCD for short) and Active Matrix / Organic Light-Emitting Diode (AMOLED for short) The driving element is directly related to the development direction of the high-performance flat panel display device. There are many kinds of materials for preparing the active layer of thin film transistors. Low Temperature Polysilicon (LTPS) material is one of the more preferred materials. Due to the regular arrangement of atoms of low temperature polysilicon, the carrier mobility is high, and the voltage For driven liquid crystal display devices, low-temperature polysilicon thin-film transistors can use smaller thin-film transistors to realize the deflection driving of liquid crystal molecules du...

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Problems solved by technology

[0012] For the display panel, the TFT in the driving circuit area is used for logic circuits and needs to have a large on-state current; however, the TFT in the display area needs to have a good potential holding capacity and a low off-state current, that is to say , the thin film transistor array substrate prepared according to the prior art cannot meet this requirement

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