A composition, an organic semiconductor field-effect transistor containing the composition, and a preparation method thereof

A field-effect transistor and organic semiconductor technology, applied in the field of polymer field-effect device performance, can solve the problems that the mobility is not very helpful, improve and increase the conductivity of semiconductors, etc.

Active Publication Date: 2017-07-21
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are relatively few reports on the use of doping to improve the mobility of organic field effect transistors. This is mainly due to the fact that the addition of dopants generally increases the off-state current, that is, increases the conductivity of the semiconductor, and reaches a high doping ratio. , even when no switch exists than
This also shows that most dopants are of great help to the improvement of electrical conductivity, but not very helpful to their mobility

Method used

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  • A composition, an organic semiconductor field-effect transistor containing the composition, and a preparation method thereof
  • A composition, an organic semiconductor field-effect transistor containing the composition, and a preparation method thereof
  • A composition, an organic semiconductor field-effect transistor containing the composition, and a preparation method thereof

Examples

Experimental program
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Effect test

preparation example Construction

[0060] Preparation of bottom-gate and bottom-contact structure devices: highly doped silicon is used as the gate, and a layer of 300nm thick silicon dioxide is prepared on it by high temperature method as the dielectric layer, with a capacitance of 9nFcm -2 .

[0061] Modification of a monomolecular modification layer (octadecyltrichlorosilane, OTS) on silicon dioxide: the silicon wafer was sonicated three times in acetone and deionized water, 5 minutes each time. Then immerse in the mixed solution of sulfuric acid and hydrogen peroxide (2 / 1, v / v), boil in a water bath at 100°C for 20 minutes. Rinse 3 times with deionized water, sonicate 3 times, 5 minutes each time, then ultrasonically clean 1 time with isopropanol, 5 minutes, and blow dry with a nitrogen gun. Place the blow-dried silicon wafer in a vacuum drying oven at 80°C for 30 minutes in vacuum, drop 2 μl of octadecyltrichlorosilane in the middle of the watch glass, keep it in the vacuum drying oven at 125°C for 240 mi...

Embodiment 1

[0080] The semiconductor active material polymer PDPPTT used in this embodiment is shown in formula III.

[0081] The additive tetramethylammonium iodide adopted is as shown in formula VI:

[0082]

[0083] 1. The synthesis of polymer PDPPTT refers to the reported literature (Z.Y.Chen, M.J.Lee, R.S.Ashraf, Y.Gu, S.Albert-Seifried, M.M.Nielsen, B.Schroeder, T.D.Anthopoulos, M.Heeney, I.McCulloch, H. Sirringhaus. High-performance ambipolardiketopyrrolopyrrole-Thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities. Adv. Mater., 2012, 24, 647-652.). The synthesized PDPPTT has a weight average molecular weight of 225KDa and a dispersion coefficient of 2.72.

[0084] 2. Fabrication of Mixed Additive Polymer Thin Film Devices

[0085] A transistor structure with bottom gate and bottom contact is adopted. Highly doped silicon is used as the gate, and a layer of 300nm thick silicon dioxide is prepared on it by high temperature method ...

Embodiment 2

[0091] The semiconductor active material polymer PDPP4T used in this embodiment is shown in formula V.

[0092] The additive that adopts is shown in formula VII:

[0093]

[0094] 1. The synthesis of polymer PDPP4T refers to the reported literature (J.Am.Chem.Soc, 2011, 133, 10364). The synthesized PDPP4T has a weight average molecular weight of 271KDa and a dispersion coefficient of 2.5.

[0095] 2. Fabrication of Mixed Additive Polymer Thin Film Devices

[0096] A transistor structure with bottom gate and bottom contact is adopted. Highly doped silicon is used as the gate, and a layer of 300nm thick silicon dioxide is prepared on it by high temperature method as the dielectric layer, and the capacitance is 9nFcm -2 .

[0097] Modification of a monomolecular modification layer (octadecyltrichlorosilane, OTS) on silicon dioxide: the silicon wafer was sonicated three times in acetone and deionized water, 5 minutes each time. Then immerse in the mixed solution of sulfuri...

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Abstract

The invention discloses a composition suitable for an organic semiconductor field effect transistor, an organic semiconductor field effect transistor containing the composition and a preparation method thereof. and an additive consisting of organic nitrogen-containing cations and anions with the nitrogen atom as the positive center. When the composition is used in an organic semiconductor field effect transistor, the mobility of the organic semiconductor field effect transistor can be effectively improved, and at the same time, the on-state current and the off-state current of the field effect device are significantly increased, and the on-off ratio hardly changes , to meet the needs of industrial production.

Description

technical field [0001] The invention belongs to the field of organic electronic materials, in particular to a method for improving the performance of polymer field effect devices by adding organic nitrogen-containing salts. Background technique [0002] Field Effect Transistor (FET) is a semiconductor device that controls the output loop current by controlling the electric field effect of the input loop. As the cornerstone of today's communication and information technology, it has had a profound impact on technological progress, and its application has significantly changed our current way of life. The organic field effect transistor uses an organic semiconductor as the active layer of the field effect transistor, that is, the conductivity of the organic semiconductor layer is regulated by an electric field. Organic semiconductors have a series of advantages such as diversity, simple fabrication process of devices, and good flexibility. Therefore, organic field effect tra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L65/00C08K5/19C08J5/18H01L51/30H01L51/40
Inventor 张德清杨一洲刘子桐罗河伟虞辰敏张关心
Owner INST OF CHEM CHINESE ACAD OF SCI
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