Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic thin film transistor with improved sub-threshold swing and switching ratio and preparation method

A technology of sub-threshold swing and organic thin film, which is applied in the field of semiconductor manufacturing, organic thin-film transistors with improved sub-threshold swing and switching ratio, and the field of preparation, which can solve the problems of low patterning, large sub-threshold swing, and low switching ratio, etc. problems, to achieve good electrical performance, improve the switching ratio, and increase the effect of off-state current

Active Publication Date: 2019-08-16
EAST CHINA NORMAL UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an improved sub-threshold swing and low-level patterning for the shortcomings of the organic thin-film transistors prepared in the prior art, which are prone to bipolarity, low on-off ratio, large sub-threshold swing, large leakage, and low patterning. Organic thin film transistor with on-off ratio and its preparation method, the preparation method is applicable to all organic thin film transistors with top-gate and bottom-contact structures

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic thin film transistor with improved sub-threshold swing and switching ratio and preparation method
  • Organic thin film transistor with improved sub-threshold swing and switching ratio and preparation method
  • Organic thin film transistor with improved sub-threshold swing and switching ratio and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Step 1: 1,4-dioxodipyrrole and thiophene polymer (DPPT-TT) was dissolved in dichlorobenzene at a ratio of 8 mg / ml, and stood on a heating plate at 70°C for 24 hours.

[0054] Step 2: Dissolve polymethyl methacrylate in butyl acetate at a ratio of 50 mg / ml and let stand on a heating plate at 70°C for 24 hours.

[0055] Step 3: Select a 1.5 cm x 1.5 cm glass slide as the substrate, ultrasonically clean it in deionized water, acetone, and isopropanol for 15 minutes, and finally dry it with a nitrogen gun.

[0056] Step 4: Using a vacuum thermal evaporation method, using a stainless steel mask, vapor-deposit gold electrodes with a length of 100 microns, a width of 1000 microns, and a thickness of 50 nanometers on the substrate as source and drain electrodes.

[0057] Step 5: Put the solution prepared in step 1, through a pipette gun, onto the glass slide treated in step 4, spin coating at 4500 rpm for 40 seconds, and place on the source and drain electrodes A semiconductor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an organic thin film transistor with improved sub-threshold swing and switching ratio and a preparation method. The object of comparison is a top-gate and bottom-contact organic thin film transistor prepared in the prior art. A gate protection layer of 20-40 nanometers is formed through a mask by vacuum thermal evaporation on the gate of the top-gate and bottom-contact organic thin film transistor prepared in the prior art, and then, an insulating dielectric layer and a semiconductor channel layer uncovered by the gate are etched through dry oxygen etching and ultraviolet exposure etching in turn by utilizing the self-alignment of the gate in the organic thin film transistor. The generation rate of carriers in the organic semiconductor channel is increased, and thesemiconductor channel layer uncovered by the gate is prevented from exciting carriers near the source and drain electrodes to increase the off-state current. The sub-threshold swing is reduced and theswitching ratio is improved while good electrical performance is maintained. The scheme has the advantages of low cost, convenient process and applicability to all kinds of top-gate and bottom-contact organic thin film transistors.

Description

technical field [0001] The invention belongs to the technical field of electronic materials and devices, and relates to semiconductor manufacturing, in particular to an organic thin film transistor with improved subthreshold swing and switching ratio and a preparation method. Background technique [0002] With the increasing demand for flexible electronic products in social life and the gradual improvement of organic semiconductor manufacturing processes, organic semiconductor materials have been widely used in thin-film transistors, and have successful commercial applications in many fields, such as large-scale complementary integrated circuits , drive circuits for flat panel displays and ion-sensitive gas sensors, etc. At present, top-gate-bottom-contact is a commonly used structure in organic thin film transistors. The most commonly used film-forming method is organic solution spin-coating method, which has the advantages of low cost, easy large-area preparation, simple p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/40
CPCH10K10/481H10K10/464
Inventor 李文武潘哲成黄凡铭许洋胡志高褚君浩
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com