An organic thin film transistor with improved subthreshold swing and switching ratio and its preparation method

Abstract

The invention discloses an organic thin film transistor with improved sub-threshold swing and switching ratio and a preparation method, and the comparison object is an organic thin film transistor with a top gate bottom contact structure prepared in the prior art. A gate protective layer of 20-40 nanometers was vacuum thermally evaporated on the gate of the top-gate bottom-contact structure organic thin film transistor prepared by the prior art through a mask plate, and then dry oxygen etching and ultraviolet exposure etching were performed in sequence. In this way, the insulating dielectric layer and the semiconductor channel layer not covered by the gate are etched by using the self-alignment effect of the gate in the organic thin film transistor. The invention improves the carrier generation rate of the organic semiconductor channel, and prevents the semiconductor channel layer not covered by the gate near the source and drain electrodes from exciting the carriers to increase the off-state current. While maintaining good electrical performance, the sub-threshold swing is reduced and the switching ratio is improved, and it has the characteristics of low cost, convenient process and applicable to various organic thin film transistors with top-gate and bottom-contact structures.

Description

technical field [0001] The invention belongs to the technical field of electronic materials and devices, and relates to semiconductor manufacturing, in particular to an organic thin film transistor with improved subthreshold swing and switching ratio and a preparation method. Background technique [0002] With the increasing demand for flexible electronic products in social life and the gradual improvement of organic semiconductor manufacturing processes, organic semiconductor materials have been widely used in thin-film transistors, and have successful commercial applications in many fields, such as large-scale complementary integrated circuits , drive circuits for flat panel displays and ion-sensitive gas sensors, etc. At present, top-gate-bottom-contact is a commonly used structure in organic thin film transistors. The most commonly used film-forming method is organic solution spin-coating method, which has the advantages of low cost, easy large-area preparation, simple p...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an improved sub-threshold swing and low-level patterning for the shortcomings of the organic thin-film transistors prepared in the prior art, which are prone to bipolarity, low on-off ratio, large sub-threshold swing, large leakage, and low patterning. Organic thin film transistor with on-off ratio and its preparation method, the preparation method is applicable to all organic thin film transistors with top-gate and bottom-contact structures

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