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Thin film transistor and its manufacturing method and array substrate

A technology of thin-film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., to achieve the effect of ensuring performance reliability

Active Publication Date: 2020-08-25
SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention provides a thin film transistor and its manufacturing method and array substrate, which solves the technical problem of improving performance reliability

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  • Thin film transistor and its manufacturing method and array substrate
  • Thin film transistor and its manufacturing method and array substrate
  • Thin film transistor and its manufacturing method and array substrate

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Embodiment Construction

[0031] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0032] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses.

[0033] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the description.

[0034] In all examples shown and discussed herein, any specific values ​​should be construed as exemplary only, and not as limitations. Therefore, other instances of the exemplary embodiment may have dif...

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Abstract

The invention discloses a thin film transistor, a manufacturing method thereof and an array substrate. The thin film transistor comprises a gate, a source, a drain, and a semiconductor layer; the semiconductor layer includes a channel region, a source region, and a drain region; and the source region and the drain region are respectively located at two sides of the channel region; and the semiconductor layer is made of an oxide semiconductor material. The thin film transistor further comprises a resistor element; one end of the resistor element is electrically connected with the source region,and the other end of the resistor element is electrically connected with the drain region; and the resistor element is used for increasing the off-state current of the thin film transistor. Accordingto the thin film transistor of the invention, the resistor element is connected in parallel between the source and the drain, and therefore, the off-state current of the oxide thin film transistor can be appropriately increased, and the problem of ghosts of pixels during the off state of a thin film transistor in a pixel driving circuit can be solved, and the timely release of static electricityin an static electricity release circuit can be ensured.

Description

technical field [0001] The present invention relates to the field of display technology, and more specifically, to a thin film transistor, a manufacturing method thereof, and an array substrate. Background technique [0002] Currently, display panels mainly include two types: LCD display panels (Liquid Crystal Display, liquid crystal display panels) and OLED (Organic Light-Emitting Diode, organic light-emitting diode) display panels. In display panel technology, TFT (Thin Film Transistor, Thin Film Field Effect Transistor) is the core component of the display panel, and is generally arranged in an array on the substrate as a switching device for the pixel unit of the display panel. The thin film transistor includes: a gate, a source, a drain and an active layer. The source and the drain are respectively connected to the active layer. When a voltage is applied to the gate, as the gate voltage increases, the surface of the active layer will be consumed The exhaust layer is tr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/336H01L27/12
CPCH01L27/1225H01L29/66969H01L29/7869
Inventor 楼均辉
Owner SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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