Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High performance transistor with multi-active layer structure of nano-tin tin oxide

An active layer, high-performance technology, applied in the direction of transistors, semiconductor devices, electrical components, etc., can solve the problems of high on-state resistance, excessive cut-off current of thin-film transistors, and low switching current of devices, and achieve improved off-state current, improve the effect of excessive cut-off current, and reduce the impact

Active Publication Date: 2020-08-21
SOUTH CHINA NORMAL UNIVERSITY
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thin film transistor prepared by this method does not improve the defects of excessive off-current, high on-state resistance and relatively low switching current of the thin film transistor.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High performance transistor with multi-active layer structure of nano-tin tin oxide
  • High performance transistor with multi-active layer structure of nano-tin tin oxide
  • High performance transistor with multi-active layer structure of nano-tin tin oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0064] Except that in step S2, the material of the gate insulating layer 03 is hafnium dioxide, other conditions are the same as in the first embodiment.

Embodiment 3

[0066] Except that in step S3, the material of the active single layer is p-type nano-tin oxide doped with 5% gallium in mass percentage, other conditions are the same as in embodiment 1.

Embodiment 4

[0068] Except that in step S3, the material of the active single layer is n-type nano-tin oxide doped with 10% of a mixture of indium and gallium with a mass ratio of 1:1 in mass percentage, other conditions are the same as in Example 1 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a nano stannide multi-active-layer-structure transistor with high performances. The transistor comprises a semiconductor substrate, a gate electrode, a gate insulator layer, a source electrode, a drain electrode, and an active layer; the gate electrode and the gate insulator layer are formed on the semiconductor substrate at an interval; the source electrode and the drain electrode are formed on the gate insulator layer at an interval; and the active layer formed on the gate insulator layer is arranged between the source electrode and the drain electrode. And the active layer includes at least two single active layers and at least one single insulating layer; and the single active layers and the single insulating layer are laminated from bottom to top alternately. According to the transistor, because the thickness of the multi-layer structure of the active layer is reduced gradually from bottom to top and the insulating layer is added in the middle, the parasitic resistance and the leakage current of the device are reduced, so that the switch current ratio and the electrical stability of the device are improved.

Description

technical field [0001] The invention relates to a field effect transistor, in particular to an oxide thin film transistor. Background technique [0002] Thin-Film Transistor (abbreviation: TFT) is one of the types of field-effect transistors, which are manufactured by depositing various thin films on a substrate, such as semiconductor active layers, dielectric layers, and metal electrode layers. [0003] The active-driven AMOLED (Active matrix Organic Light-Emitting Diode) display technology that combines thin-film transistor (TFT) devices with OLED (Organic Light-Emitting Diode) technology is an important development direction for current and future flat panel displays; and TFT devices are used as OLED The electrical reliability and stability of the control switch device for each pixel in the display device will significantly affect the image performance presented by the display medium. The active layer of the previous TFT is usually made of semiconductor materials such as...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/20H01L29/786
CPCH01L29/0684H01L29/20H01L29/786
Inventor 赵灵智姜如青
Owner SOUTH CHINA NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com