Structures with Thinned Dielectric Materials

Abstract

The disclosure relates to semiconductor structures and, more particularly, to structures with thinned dielectric material and methods of manufacture. The method includes depositing a high-k dielectric on a substrate. The method further includes depositing a titanium nitride film directly on the high-k while simultaneously etching the high-k dielectric.

Description

technical field [0001] The present invention relates to semiconductor structures, and more particularly to structures having thinned dielectric materials and methods of fabrication. Background technique [0002] The trend in modern integrated circuit manufacturing is to produce semiconductor devices, such as field effect transistors (FETs), that are as small as possible. In a general FET, the source and drain are formed in the active region of the semiconductor substrate by implanting n-type or p-type impurities in the semiconductor material. Interposed between the source and drain is a channel (or body) region. Disposed over the body region is a gate electrode. The gate electrode is separated from the body by a gate dielectric layer. [0003] While making smaller transistors allows more transistors to be placed on a single substrate to form relatively large circuitry in a relatively small die area, such size reductions improve performance but also reduce reliability . ...

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In practice, however, making such adjustments would be difficult using existing technology

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