Fingerprint recognition device and electronic equipment
A technology for fingerprint identification and electronic equipment, which is used in character and pattern recognition, acquisition/organization of fingerprints/palmprints, circuits, etc., and can solve the problem that fingerprint detection and identification are prone to errors, the optical fingerprint identification sensor area is small, and the photocurrent is low. And other issues
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Embodiment 1
[0048] Figure 2A A partial cross-sectional schematic diagram of the fingerprint identification device provided by this embodiment is shown, Figure 2A Only a portion of the relevant structure is shown for better clarity
[0049] Such as Figure 2A As shown, the fingerprint recognition device 1 of this embodiment includes: a first substrate 100, a second substrate 200 and a fingerprint recognition sensor; the second substrate 200 is arranged opposite to the first substrate 100; the fingerprint recognition sensor is arranged on the first substrate 100 Between the second substrate 200 , the fingerprint identification sensor includes a plurality of photoelectric sensing units 300 , and each photoelectric sensing unit 300 includes a curved photoelectric sensing part 3000 . Therefore, the region of the photosensitive unit 300 used for photoelectric sensing at least has a non-planar portion, and the non-planar portion has a larger area when occupying the same projected area (occup...
Embodiment 2
[0076] Image 6 A partial cross-sectional schematic diagram of the fingerprint identification device provided by Embodiment 2 is shown. In this embodiment, the fingerprint identification device is disposed on the second substrate 1200 touched by a human finger. The fingerprint identification device provided by this embodiment also includes a first insulating layer 170, for example, the first insulating layer 170 can be a transparent insulating layer, and the material of the first insulating layer 170 includes silicon nitride (SiNx), silicon oxide (SiOx), One or more of silicon oxynitride (SiNxOy). The first insulating layer 170 is disposed on the second substrate 1200, and the first insulating layer 170 includes a first concave portion 110, and the photosensitive unit 3100, the interlayer insulating layer 1160 and the thin film transistor 5100 are sequentially disposed in the first concave portion 110. In this case, the thin film transistor 5100 and the photosensitive unit 3...
Embodiment 3
[0081] Figure 8 A partial cross-sectional schematic diagram of the fingerprint identification device provided by the third embodiment is shown. In Embodiment 1, the photosensor 300 and the thin film transistor 500 are overlapped in a direction perpendicular to the first substrate 100 . The thin film transistors 500 are arranged side by side in the direction of the present embodiment, which is a bottom-gate thin film transistor.
[0082] Such as Figure 8 As shown, in this embodiment, the first electrode 301 and the fourth electrode 151 are provided as an integrated structure, that is, they are formed through the same conductive layer; Or can be electrically connected to achieve the same technical effect. For example, a light-shielding layer may be further formed above and below the thin film transistor 500 to block incident light from the first substrate 100 and the second substrate 200 from irradiating the thin film transistor 500 . Each layer of this embodiment can be p...
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