A kind of semiconductor device and its preparation method, electronic device

A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve problems such as spacer failure, spacer damage, and NOR flash memory threshold voltage stability deterioration

Active Publication Date: 2019-09-03
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For NOR flash memory, the threshold voltage should remain stable, and its threshold voltage depends on the electrons in the floating gate. Through gate disturbance testing, it is found that the threshold voltage stability of NOR flash memory becomes worse as the size of semiconductor devices continues to decrease. , the reason may be that the spacer on the gate is damaged when the contact hole opening is formed between the gates, which affects the performance of the device and even makes the spacer invalid

Method used

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  • A kind of semiconductor device and its preparation method, electronic device
  • A kind of semiconductor device and its preparation method, electronic device
  • A kind of semiconductor device and its preparation method, electronic device

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Experimental program
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Embodiment 1

[0036] A specific embodiment of the present invention will be described below in conjunction with the accompanying drawings, wherein, Figures 1a-1e It is a schematic diagram of the preparation process of the semiconductor device described in one embodiment of the present invention; figure 2 It is a flow chart of the manufacturing process of the semiconductor device described in one embodiment of the present invention.

[0037] First, step 101 is performed to provide a semiconductor substrate 101 on which a gate dielectric layer is formed.

[0038] First, refer to Figure 1a , wherein the semiconductor substrate 101 can be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI) , silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc.

[0039] In addition, an active region may be defined on the semiconductor substrate 101 . Other active devices may als...

Embodiment 2

[0089] The present invention also provides a semiconductor device, the semiconductor device includes a semiconductor substrate, the semiconductor substrate 101 can be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), on-insulator Stacked silicon (SSOI), stacked silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc.

[0090] In addition, an active region may be defined on the semiconductor substrate 101 . Other active devices may also be included on the active area, which are not marked in the shown figures for convenience.

[0091] A gate dielectric layer 102 is formed on the semiconductor substrate 101 , wherein the gate dielectric layer 102 may be a dielectric material commonly used in the field, for example, an oxide may be selected.

[0092] When oxide is selected as the gate dielectric layer 102 , the formation method of the gate dielectric layer 102 can be high temperat...

Embodiment 3

[0105] The present invention also provides an electronic device, including the semiconductor device described in the second embodiment. Wherein, the semiconductor device is the semiconductor device described in the second embodiment, or the semiconductor device obtained according to the preparation method described in the first embodiment.

[0106] The electronic device of this embodiment can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV set, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. , can also be any intermediate product including the semiconductor device. The electronic device according to the embodiment of the present invention has better performance due to the use of the above-mentioned semiconductor device.

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PUM

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Abstract

The invention relates to a semiconductor device, a preparation method thereof, and an electronic device. The method includes step S1: providing a semiconductor substrate, on which a plurality of gate stacks are formed, and the gate stacks include sequentially stacked floating gates, isolation layers, control gates and mask layers; Step S2: sequentially forming a first spacer material layer and a second spacer material layer on the semiconductor substrate and the gate stack to cover the gate stack, wherein the first spacer material An oxide layer is selected; step S3: etching the second spacer material layer to expose the first spacer material layer on the semiconductor substrate and on the upper sidewall of the mask layer; step S4: Etching and removing the exposed first spacer material layer to form a spacer on the sidewall of the gate stack; step S5 : depositing a stop layer to cover the spacer and the mask layer. The method further improves the yield and performance of the NOR flash memory.

Description

technical field [0001] The present invention relates to a semiconductor device, in particular, the present invention relates to a semiconductor device, a preparation method thereof, and an electronic device. Background technique [0002] With the rapid development of portable electronic devices (such as mobile phones, digital cameras, MP3 players, and PDAs, etc.), the requirements for data storage are getting higher and higher. Non-volatile flash memory has become the most important storage component in these devices due to its ability to save data even when power is off. Among them, because flash memory (flash memory) can achieve high chip storage density, and does not introduce new materials , The manufacturing process is compatible, therefore, it can be more easily and reliably integrated into own digital and analog circuits. [0003] NOR and NAND are two main non-volatile flash memory technologies on the market today. NOR flash memory (Flash) devices are a type of non-v...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L27/11517H01L27/11524
CPCH01L29/66833H10B43/30
Inventor 张翼英陈卓凡
Owner SEMICON MFG INT (SHANGHAI) CORP
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