Microwave dielectric ceramic by low-temperature co-fired ceramics

Abstract

The invention relates to a microwave dielectric ceramic by low-temperature co-fired ceramics and a preparation method thereof. The microwave dielectric ceramic consists of ywt% of [(1-x)Ba5Nb4O15-xBaWO4] ceramic material and zwt% of BaO-B2O3-SiO2 glass material, wherein the ranges of x, y and z are as follows: x is more than or equal to 0.3 and less than or equal to 0.85, z is more than or equal to 1% and less than or equal to 15%, and the sum of y and z is 100%. The zwt% BaO-B2O3-SiO2 glass material is prepared from the components in percentage by weight: 5-35wt% of BaO, 10-40wt% of B2O3 and 5-25wt% of SiO2, and is obtained by mixing powder of all the components and melting at the temperature of 1000-1300 DEG C. The [(1-x)Ba5Nb4O15-xBaWO4] ceramic material with the percent of ywt% and BaO-B2O3-SiO2 glass material with the percent of zwt% are mixed and then sintered. The material is sintered at a low temperature of 880-900 DEG C for 0.5-4 hours, has the range of dielectric constant of 11.5-30.4, and is applicable to the range from a medium dielectric constant to a low dielectric constant. The microwave dielectric ceramic has the excellent characteristics of low dielectric loss, high quality factor, low temperature frequency coefficient and low capacitance coefficient and the like, and can be co-fired with a noble metal electrode (silver) in the atmospheric environment.

Description

technical field [0001] The invention relates to a technology for manufacturing microwave dielectric ceramics, in particular to low-intermediate dielectric and low dielectric constant low-temperature co-fired ceramic microwave dielectric ceramics and a manufacturing method thereof. Background technique [0002] The general low temperature co-fired ceramic (Low temperature co-fired ceramic, LTCC) method includes ceramics plus low melting point oxides such as boron oxide (B 2 o 3 ) or vanadium pentoxide (V 2 o 5 ) mainly, relying on low-melting point oxides to produce melting first to reduce the sintering temperature. Another way is to add ceramics to glass to produce liquid phase sintering behavior and reduce the sintering temperature. [0003] Due to Ba 5 Nb 4 o 15 When sintering at a high temperature of 1,380°C, Srivastave, A.M. published in "J.Solid State Chem" Volume 134 in 1997, and the dielectric constant ε can be obtained r =41, quality factor Q×f=57,000GHz and ...

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Problems solved by technology

[0004] However, if adding B 2 o 3 and other low-melting oxides, due to B 2 o 3 It is easy to react with water, methanol, ethanol and commonly used binders such as PVA and PVB to produce a gel effect, resulting in poor dispersion of powder in the ribbon manufacturing process in the Multi-layer Ceramic Capacitor (MLCC) process Uniformity makes the sintered density change greatly

In addition B 2 o 3 The solubility in water and alcohol is large, and it is easy to make B due to the powder filtration and drying stage in the latter part of the process. 2 o 3 component loss, resulting in B 2 o 3 Reduction leads to lower sintered density and loss of dielectric properties

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