Bismuth tungstate heterojunction composite material loaded with sulfur indium copper quantum dots and its preparation method and application

A composite material and quantum dot technology, applied in the field of bismuth tungstate heterojunction composite materials, can solve the problems of constraints, narrow spectral response range, fast photo-generated electron-hole recombination speed, etc., to promote effective separation, large application potential, The effect of green and environmental protection in the preparation process

Active Publication Date: 2019-10-22
WUHAN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But in contrast to Bi 2 WO 6 During the research process of the material, the researchers found that it has problems such as narrow spectral response range (2 WO 6 extensive use of materials

Method used

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  • Bismuth tungstate heterojunction composite material loaded with sulfur indium copper quantum dots and its preparation method and application
  • Bismuth tungstate heterojunction composite material loaded with sulfur indium copper quantum dots and its preparation method and application
  • Bismuth tungstate heterojunction composite material loaded with sulfur indium copper quantum dots and its preparation method and application

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Embodiment 1

[0036] A bismuth tungstate heterojunction composite material loaded with sulfur indium copper quantum dots, the preparation method of which comprises the following steps:

[0037] 1) Synthesis of flower-like bismuth tungstate: Dissolve 2mmol of bismuth nitrate pentahydrate in 40mL of dilute nitric acid (0.3M), add 20mL of sodium tungstate solution (0.05M) under stirring, and then add 20mL of sodium hydroxide solution (0.8M ), stirred for 24 hours, placed the reaction solution in a stainless steel autoclave lined with polytetrafluoroethylene, heated to 160°C for hydrothermal reaction for 8 hours, centrifuged, washed and dried, and cooled to obtain a flower-shaped multi-stage Structure bismuth tungstate (carrier);

[0038] 2) Synthesis of sulfur indium copper quantum dots: Dissolve 0.2mmol of cuprous chloride and 0.2mmol of indium chloride tetrahydrate in 2mL of dodecyl mercaptan and 12mL of octadecene; hours; cooled to room temperature under the protection of nitrogen, centrif...

Embodiment 2

[0043] A bismuth tungstate heterojunction composite material loaded with sulfur indium copper quantum dots, the specific preparation steps are as follows:

[0044] 1) Synthesis of flower-like bismuth tungstate: Dissolve 2mmol of bismuth nitrate pentahydrate in 40mL of dilute nitric acid (0.3M), add 20mL of sodium tungstate solution (0.05M) under stirring, and then add 20mL of sodium hydroxide solution (0.8M ), stirred for 24 hours, placed the reaction solution in a stainless steel autoclave lined with polytetrafluoroethylene, heated to 160°C for hydrothermal reaction for 8 hours, centrifuged, washed and dried, and cooled to obtain a flower-shaped multi-stage Structure bismuth tungstate (carrier);

[0045] 2) Synthesis of sulfur indium copper quantum dots: Dissolve 0.2mmol of cuprous chloride and 0.2mmol of indium chloride tetrahydrate in 2mL of dodecyl mercaptan and 12mL of octadecene; hours; cooled to room temperature under the protection of nitrogen, centrifuged, washed and...

Embodiment 3

[0050] A bismuth tungstate heterojunction composite material loaded with sulfur indium copper quantum dots, the specific preparation steps are as follows:

[0051] 1) Synthesis of flower-like bismuth tungstate: Dissolve 2mmol of bismuth nitrate pentahydrate in 40mL of dilute nitric acid (0.3M), add 20mL of sodium tungstate solution (0.05M) under stirring, and then add 20mL of sodium hydroxide solution (0.8M ), stirred for 24 hours, placed the reaction solution in a stainless steel autoclave lined with polytetrafluoroethylene, heated to 160°C for hydrothermal reaction for 8 hours, centrifuged, washed and dried, and cooled to obtain a flower-shaped multi-stage Structure bismuth tungstate (carrier);

[0052] 2) Synthesis of sulfur indium copper quantum dots: Dissolve 0.2mmol of cuprous chloride and 0.2mmol of indium chloride tetrahydrate in 2mL of dodecanethiol and 12mL of octadecene, and then raise the temperature to 220°C under the protection of nitrogen for reaction 2 hours; ...

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Abstract

The invention discloses a bismuth tungstate heterojunction composite material loaded with copper indium quantum dots as well as a preparation method and application thereof. The composite material is a sulfur indium copper quantum dot-modified bismuth tungstate heterojunction. The preparation method comprises the following preparation steps: mixing and stirring homemade sulfur indium copper quantum dots and a bismuth tungstate flower-like multi-stage structural material in a chloroform solution, performing ultrasonic treatment, heating till complete solvent evaporation and calcining a dried mixture under a nitrogen atmosphere to obtain the sulfur indium copper quantum dot-modified bismuth tungstate heterojunction composite material. The preparation method disclosed by the invention uses the lowly-toxic sulfur indium copper quantum dots to replace traditional cadmium or lead-containing quantum dots, so that the synthetic process is green and environment-friendly; the activity of a synthesized composite photo-catalyst is enhanced, so that the synthesized composite photo-catalyst can be used as a volatile organic pollutant photo-catalyst.

Description

technical field [0001] The invention belongs to the technical field of preparation of chemical engineering, functional materials and photocatalytic materials, and specifically relates to a bismuth tungstate heterojunction composite material modified by sulfur indium copper quantum dots and its preparation and application. Background technique [0002] In recent years, with the acceleration of urbanization and the rapid development of social economy, the problem of environmental pollution has become more and more prominent. Benzene and toluene are important volatile organic compounds (VOCs), which mainly come from automobile exhaust, petrochemical industry emissions, interior decoration and tobacco burning. The results of investigation and research show that these pollutants will cause major environmental problems such as photochemical smog, greenhouse effect, ozone layer destruction and smog after entering the ecological cycle system. As an emerging advanced oxidation techn...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/047B01D53/86B01D53/72
CPCB01D53/8668B01J27/047B01D2257/7027B01J35/39
Inventor 柯军罗盛周鸿儒
Owner WUHAN INSTITUTE OF TECHNOLOGY
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