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Method for rapidly preparing electrode of photoelectric device at normal temperature and pressure

A technology for optoelectronic devices and electrodes, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of complicated processes and expensive equipment, and achieve the effects of cheap equipment, simple and convenient optical paths, and batch production.

Inactive Publication Date: 2017-05-31
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current 3D printing technology used to prepare electrodes is based on the method of inkjet printing, the equipment is expensive, and the process is relatively complicated.

Method used

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  • Method for rapidly preparing electrode of photoelectric device at normal temperature and pressure
  • Method for rapidly preparing electrode of photoelectric device at normal temperature and pressure
  • Method for rapidly preparing electrode of photoelectric device at normal temperature and pressure

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Embodiment

[0032] see figure 1 , figure 2 and image 3 As shown, the electrode was prepared according to the preparation process and device. Among them, the substrate 3 is made of quartz glass, the film-making equipment 5 is a homogenizer, the laser 6 is a 405nm continuous laser, the focusing objective lens 7 has a magnification of ×10, the raw material for making electrodes is Ag nanoparticle solution, and the ultrasonic cleaning solvent is acetone.

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Abstract

The present invention discloses a method for rapidly preparing electrode of photoelectric device at normal pressure and temperature, which uses inexpensive device and constructs easy and convenient light path, can prepare the electrode at normal temperature and pressure and choose different materials to make the electrode and design various electrode structures; the method can choose different substrate plates, including flexible and transparent ones, also can preparing electrode in fixed point and position without templates according to the device requirements. The present invention has good expandability, can change film preparation method according to requirements, the light path of which is easy to change or added to other optical devices, and can realize batch preparation of the electrodes.

Description

technical field [0001] The invention relates to a method for rapidly preparing photoelectric device electrodes under normal temperature and pressure. Background technique [0002] In the process of preparing optoelectronic devices (such as photodetectors, LEDs, etc.), electrode preparation is an essential step. The current preparation methods mainly include photolithography, evaporation, sputtering and so on. Among them, photolithography is a chemical processing method for producing precise, fine and complex thin-layer patterns on the surface of workpieces, and is mostly used in the production of semiconductor devices and integrated circuits. Electrode preparation by photolithography is divided into bottom mold processing, glue coating, pre-baking, exposure, development, mold hardening, etching, and glue removal. The experimental steps are complex and require high technical requirements for experimenters. At the same time, the efficiency is low and the production cost is hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L33/36
CPCH01L31/022408H01L33/36H01L2933/0016
Inventor 陈军韦奕吴晔刘凯曾海波
Owner NANJING UNIV OF SCI & TECH