Method of producing layered quantum dot LED backlight

A technology of LED backlight and manufacturing method, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of complex production process of quantum dot LED backlight, low light conversion efficiency and color gamut value, and high cost, and achieve production Low cost, improved color gamut value, and the effect of preventing light decay

Active Publication Date: 2017-05-31

SHENZHEN JUFEI OPTOELECTRONICS

10 Cites 1 Cited by

AI-Extracted Technical Summary

Problems solved by technology

[0005] For this reason, the technical problem to be solved by the present invention lies in that the existing quantum dot LED backlight has complex production process, high cost, low li...

Abstract

Disclosed in the invention is a method of producing a layered quantum dot LED backlight. Fluorescent glue A is produced and disposed on the surface of an LED lens; then fluorescent glue B is produced and disposed on the surface of the fluorescent glue A; and at last one layer of photocurable glue as a protective film is disposed on the fluorescent glue B, thus the layered LED lens is produced. The LED lens is fixed on an LED light strip. The light emitted by the LED light strip is mixed with the light emitted by the fluorescent glue A and fluorescent glue B so that white light is obtained. Compared with traditional backlight materials, a quantum dot material has a narrower half-wave width such that the color gamut value of the LED backlight is increased greatly. According to the producing method in the invention, the color gamut value of the LED backlight can reach 95% or more of NTSC standard. Moreover, the method is low-cost and simple. In the prior art, various kinds of fluorescent materials are mixed directly and react with each other, so that the structure of the quantum dot fluorescent material is destroyed and the light is attenuated. The layered fluorescent glue solves the above problems.

Application Domain

Solid-state devicesSemiconductor devices

Technology Topic

Quantum dotLight source +6

Image

Examples

Experimental program(6)

Example Embodiment

[0030] Example 1

[0031] The present invention provides a method for manufacturing a layered quantum dot LED backlight. The method includes the following steps:

[0032] a. Weigh 0.04g of luminescent material A, the luminescent material A is InAs, InN green light quantum dot phosphor with emission wavelength of 542nm, wherein the mass of the InAs quantum dot phosphor is 0.02g, and 0.04g polyurethane The light-curing glue is added to the luminescent material A and subjected to vacuum degassing and stirring to obtain quantum dot fluorescent glue A. The quantum dot fluorescent powder is in powder form, which may also be in solvent dispersion;

[0033] b. Coat the fluorescent glue A on the outer surface of the LED lens in the LED backlight. The thickness of the coated fluorescent glue A is 3μm, and the LED lens coated with fluorescent glue A is placed in a UV curing oven at 230nm Irradiate the fluorescent glue A under the ultraviolet light for 3s to cure;

[0034] c. Weigh 0.57g of luminescent material B, the luminescent material B is a phosphate red phosphor with an emission wavelength of 655nm, weigh 0.57g of epoxy-based light-curing glue, and add it to the luminescent material B to proceed Vacuum degassing and stirring to obtain fluorescent glue B;

[0035] d. Coating the fluorescent glue B on the surface of the fluorescent glue A after curing, so that the fluorescent glue B completely covers the fluorescent glue A, the coating thickness of the fluorescent glue B is 3 μm, and the fluorescent glue will be coated The LED lens of B is placed in an ultraviolet curing oven, and the fluorescent glue B is cured by irradiating it under 230nm ultraviolet light for 3s;

[0036] e. Coat a layer of epoxy light-curing glue with a thickness of 10 μm on the surface of the fluorescent glue B, so that the light-curing glue completely covers the fluorescent glue B, and place the LED lens coated with epoxy light-curing glue In a UV curing oven, irradiate the UV light at 230 nm for 5 seconds to cure the photocurable glue to obtain a layered LED lens with a protective layer of the photocurable glue;

[0037] f. Fix the layered LED lens on the LED monochromatic light bar, the lamp beads in the LED monochromatic light bar only emit light from the light-emitting chip, and the phosphor is not encapsulated in the lamp beads. In this embodiment, the The light-emitting chip is a blue chip with an emission wavelength of 445 nm, and the blue chip is combined with the green light emitted by the fluorescent glue A and the red light emitted by the fluorescent glue B to obtain white light emission, that is, a stratified quantum dot LED backlight is produced.

[0038] The structure of the layered LED backlight in this embodiment is as follows figure 1 As shown, it includes an LED monochromatic light bar. The LED light bar includes a bracket 1, a metal plating layer 2 arranged on the upper surface of the bracket 1, a light-emitting chip 3 fixed on the surface of the metal plating layer, and the light-emitting chip and The metal plating layer 2 is also connected by a bonding wire 4, the light-emitting chip 3 is packaged with a packaging glue layer 5, the LED light bar is provided with the LED lens 6, and the outer surface of the LED lens 6 is coated with The fluorescent glue layer A7, the surface of the fluorescent glue layer A7 is coated with a fluorescent glue layer B8, the surface of the fluorescent glue layer B is coated with a photocurable glue protective layer 9, wherein the fluorescent glue layer A and the fluorescent glue layer B At least one of them contains quantum dot materials.

Example Embodiment

[0039] Example 2

[0040] The present invention provides a method for manufacturing a layered quantum dot LED backlight. The method includes the following steps:

[0041] a. Weigh 0.13g of luminescent material A, the luminescent material A is CdSe red light quantum dot phosphor with an emission wavelength of 645nm, weigh 39g of epoxy-based light-curing glue into the luminescent material A, and perform vacuum degassing and stirring , Obtain quantum dot fluorescent glue A, said quantum dot fluorescent powder is in powder form, which may also be in solvent dispersion form;

[0042] b. Coat the fluorescent glue A on the inner surface of the LED lens in the LED backlight. The thickness of the coated fluorescent glue A is 300 μm. Place the LED lens coated with fluorescent glue A in a UV curing oven at 400 nm Irradiate the fluorescent glue A under the ultraviolet light for 100s to cure;

[0043] c. Weigh 0.03g of luminescent material B, the luminescent material B is BaTiO with an emission wavelength of 540nm 3 , CsPbCl 3 , CsPbBr 3 Green light quantum dot silver light powder, weigh out 1.57g of organic silicon light-curing glue, add it to the luminescent material B, and perform vacuum degassing and stirring to obtain fluorescent glue B;

[0044] d. Coat the fluorescent glue B on the surface of the cured fluorescent glue A so that the fluorescent glue B completely covers the fluorescent glue A, the coating thickness of the fluorescent glue B is 300 μm, and the fluorescent glue will be coated The LED lens of B is placed in an ultraviolet curing oven and irradiated under 400nm ultraviolet light for 100s to cure the fluorescent glue B;

[0045] e. Coat a layer of organic silicon light-curing glue with a thickness of 1000 μm on the surface of the fluorescent glue B, so that the light-curing glue completely covers the fluorescent glue B, and place the LED lens coated with epoxy-based light-curing glue In the UV curing oven, irradiate the UV light at 400nm for 200s to cure the photocurable glue to obtain a layered LED lens with a protective layer of the photocurable glue;

[0046] f. Fix the layered LED lens on the LED monochromatic light bar, the lamp beads in the LED monochromatic light bar only emit light from the light-emitting chip, and the phosphor is not encapsulated in the lamp beads. In this embodiment, the The light-emitting chip is a blue chip emitting light with a wavelength of 480 nm. The blue chip is combined with the red light emitted by the fluorescent glue A and the green light emitted by the fluorescent glue B to obtain white light emission, that is, a stratified quantum dot LED backlight is produced.

[0047] The structure of the layered LED backlight in this embodiment is as follows figure 2 As shown, it includes an LED monochromatic light bar. The LED light bar includes a bracket 1, a metal plating layer 2 arranged on the upper surface of the bracket 1, a light-emitting chip 3 fixed on the surface of the metal plating layer, and the light-emitting chip and The metal plating layer 2 is also connected by a bonding wire 4, the light emitting chip 3 is packaged with a packaging glue layer 5, the LED light bar is provided with the LED lens 6 on the outside, and the inner surface of the LED lens 6 is coated with The fluorescent glue layer A7, the surface of the fluorescent glue layer A7 is coated with a fluorescent glue layer B8, the surface of the fluorescent glue layer B8 is coated with a photocurable glue protective layer 9, wherein the fluorescent glue layer A and the fluorescent glue layer B At least one of them contains quantum dot materials.

Example Embodiment

[0048] Example 3

[0049] The present invention provides a method for manufacturing a layered quantum dot LED backlight. The method includes the following steps:

[0050] a. Weigh 0.13g of luminescent material A, the luminescent material A is CdSe red light quantum dot phosphor with an emission wavelength of 645nm, weigh 39g of epoxy-based light-curing glue into the luminescent material A, and perform vacuum degassing and stirring , Obtain quantum dot fluorescent glue A, said quantum dot fluorescent powder is in powder form, which may also be in solvent dispersion form;

[0051] b. Coat the fluorescent glue A on the inner surface of the LED lens in the LED backlight. The thickness of the coated fluorescent glue A is 300 μm. Place the LED lens coated with fluorescent glue A in a UV curing oven at 400 nm Irradiate the fluorescent glue A under the ultraviolet light for 100s to cure;

[0052] c. Weigh 0.03g of luminescent material B, the luminescent material B is BaTiO with an emission wavelength of 540nm 3 , CsPbCl 3 , CsPbBr 3 Green light quantum dot silver light powder, weigh out 1.57g of organic silicon light-curing glue, add it to the luminescent material B, and perform vacuum degassing and stirring to obtain fluorescent glue B;

[0053] d. Coat the fluorescent glue B on the surface of the cured fluorescent glue A so that the fluorescent glue B completely covers the fluorescent glue A, the coating thickness of the fluorescent glue B is 300 μm, and the fluorescent glue will be coated The LED lens of B is placed in an ultraviolet curing oven and irradiated under 400nm ultraviolet light for 100s to cure the fluorescent glue B;

[0054] e. Coat a layer of organic silicon light-curing glue with a thickness of 1000 μm on the surface of the fluorescent glue B, so that the light-curing glue completely covers the fluorescent glue B, and place the LED lens coated with epoxy-based light-curing glue In the UV curing oven, irradiate the UV light at 400nm for 200s to cure the photocurable glue to obtain a layered LED lens with a protective layer of the photocurable glue;

[0055] f. Fix the layered LED lens on the LED monochromatic light bar, the lamp beads in the LED monochromatic light bar only emit light from the light-emitting chip, and the phosphor is not encapsulated in the lamp beads. In this embodiment, the The light-emitting chip is a blue chip emitting light with a wavelength of 480 nm. The blue chip is combined with the red light emitted by the fluorescent glue A and the green light emitted by the fluorescent glue B to obtain white light emission, that is, a stratified quantum dot LED backlight is produced.

PUM

Property	Measurement	Unit
Thickness	3.0 ~ 300.0	µm
Luminescence peak wavelength	230.0 ~ 480.0	nm

Description & Claims & Application Information

We can also present the details of the Description, Claims and Application information to help users get a comprehensive understanding of the technical details of the patent, such as background art, summary of invention, brief description of drawings, description of embodiments, and other original content. On the other hand, users can also determine the specific scope of protection of the technology through the list of claims; as well as understand the changes in the life cycle of the technology with the presentation of the patent timeline. Login to view more.

Classification and recommendation of technical efficacy words

Simple process

Method of producing layered quantum dot LED backlight

AI-Extracted Technical Summary

Problems solved by technology

Abstract

Image

Examples

Example Embodiment

Example Embodiment

Example Embodiment

PUM

Description & Claims & Application Information

Similar technology patents

Fuel cell stack with separator of a laminate structure

Method for extracting sweet potato dietary fibers

Novel anti-reflection conductive film

Method for producing blackboard and whiteboard made from enamel in super strength, and glaze of enamel

Method for extracting multiple chemical products from coal-tar oil

Classification and recommendation of technical efficacy words

Multimedia data recording apparatus, monitor system, and multimedia data recording method

Simultaneously desulfurization and denitration wet ammonia flue gas cleaning technology and system thereof

Method for recycling metal oxide from waste flue gas denitration catalyst

Method for removing COS from a stream of hydrocarbon fluid and wash liquid for use in a method of this type

Method for preparing graphite alkyne film