Nondestructive measurement method adopting heterotherm PL spectrum for obtaining semiconductor material impurity ionization energy

Abstract

The invention discloses a nondestructive measurement method adopting a heterotherm PL spectrum for obtaining semiconductor material impurity ionization energy. By analyzing the thermal quenching behavior of a semiconductor material that the heterotherm PL spectrum peak intensity is lowered along with increase of temperature, the impurity ionization energy of the semiconductor material is obtained. The method comprises the specific steps that 1, the heterotherm PL spectrum of the semiconductor material to be measured is measured; 2, the thermal quenching peak intensity of the semiconductor material to be measured under different temperatures is obtained through spectrum peak fitting; 3, fitting is performed on thermal quenching peak spectrum strength-temperature relation experiment data, and the impurity ionization energy, including donor impurity ionization energy and acceptor impurity ionization energy, of the semiconductor material is obtained; 4, the steps 1-3 are executed repeatedly, the impurity ionization energy of the semiconductor material to be measured is measured repeatedly, and by adopting the least square method, the impurity ionization energy obtained after repeated measurement is calculated. The nondestructive spectrum analysis technology is utilized, the technical defect that an existing testing method is complex and destructive is overcome, and the method is rapid, easy and convenient to implement, high in precision and nondestructive to tested materials.

Description

technical field [0001] The invention discloses a non-destructive measurement method for obtaining the ionization energy of semiconductor material impurities by adopting variable temperature PL spectrum, and relates to the technical testing field of semiconductor materials, in particular to the measurement technology of the ionization energy of semiconductor material impurities. Background technique [0002] Semiconductor technology, as the basic technical support of the third industrial revolution, cannot develop without the impurity engineering of semiconductor materials, and it is the impurity engineering that creates its special electrical properties. To characterize the properties of impurities within semiconductor materials, we need to measure the ionization energy of the impurities. The impurity ionization energy of semiconductor materials is generally obtained by variable temperature Hall test, or by secondary ion mass spectrometry (SIMS), combined with capacitance-vo...

AI Technical Summary

Problems solved by technology

Before the Hall test and CV test, it is necessary to make metal electrodes on the semiconductor material. Due to the high temperature environment and the diffusion of the electrode material into the semiconductor material during the process of making the electrode, the test material itself is caused to a certain extent. performance degradation and contamination, while affecting the accuracy of test results

If SIMS is used, it will directly cause physical damage to the material and can only be used for one-time testing

On the other hand, whether it is a Hall test or a CV test, certain requirements are put forward for the semiconductor processing technology and electrical test methods, which increases the complexity of the test.

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