Solar panel etching process for preventing EL pollution
A solar panel and process technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems affecting panel efficiency, high impurity content in panels, economic losses, etc., and reduce leakage panels and cracked panels. The generation of silicon wafers, the realization of the function of silicon wafer impurity removal, and the effect of preventing EL pollution
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Embodiment 1
[0024] The invention provides a technical solution:
[0025] A solar panel etching process preventing EL pollution, comprising the following steps:
[0026] Step 1, coating preparation: For silicon wafers for solar cell panels, according to the segregation model, the thicker the aluminum film, the better the gettering effect, so the upper and lower surfaces of the silicon wafers to be etched are coated with a Layer aluminum film, in order to reduce the reaction time of the aluminum film in the following steps, the thickness of the aluminum film is set to 15cm, and it can getter well.
[0027] Step 2, primary impurity removal: Put the coated silicon wafer obtained in step 1 into the deionized water pool, continuously feed oxygen into the pool, and simultaneously heat the pool with variable temperature. The heating time is 3 minutes, and within 3 minutes , the temperature gradually increased from 700°C to 900°C, and then decreased from 900°C to 700°C.
[0028] Step 3, secondar...
Embodiment 2
[0034] A solar panel etching process preventing EL pollution, comprising the following steps:
[0035] Step 1, coating preparation: For silicon wafers for solar cell panels, according to the segregation model, the thicker the aluminum film, the better the gettering effect, so the upper and lower surfaces of the silicon wafers to be etched are coated with a Layer aluminum film, in order to reduce the reaction time of the aluminum film in the following steps, the thickness of the aluminum film is set to 20cm, and it can getter well.
[0036] Step 2, primary impurity removal: put the coated silicon wafer obtained in step 1 into the deionized water pool, continuously feed oxygen into the pool, and simultaneously heat the pool with variable temperature, the heating time is 5 minutes, and within 5 minutes , the temperature gradually increased from 700°C to 900°C, and then decreased from 900°C to 700°C.
[0037] Step 3, secondary impurity removal: When the heating time in step 2 is ...
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