Thermoelectric coupling model establishment method applied to MMIC (Monolithic Microwave Integrated Circuit) design

Abstract

The invention provides a thermoelectric coupling model establishment method applied to an MMIC (Monolithic Microwave Integrated Circuit) design. The thermoelectric coupling model establishment method comprises the following steps: S1, establishing a scalable compact type model of a heating element; S2, establishing a chip thermoelectric coupling parameter network according to a chip packaging environment and a layout; S3, carrying out thermal simulation on thermal transmission properties of the heating element and extracting a change relation of each parameter value in the thermoelectric coupling parameter network along temperature according to thermal simulation data; S4, connecting the scalable compact type model of the heating element with the thermoelectric coupling parameter network according to a port corresponding relation, so as to obtain a thermoelectric coupling model of a transistor. According to the thermoelectric coupling model establishment method, the compact type thermoelectric coupling model is combined with the thermoelectric coupling model based on thermal numerical value simulation, so that the thermoelectric coupling model has the advantages of rapid solution speed and good convergence property of the compact type model, and can also be used for simulating influences on electric performances of a chip of various packaging environments and different layouts; the packaging environments and the chip layout can be optimized.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a thermoelectric coupling model establishment method applied to MMIC design. Background technique [0002] For RF microwave high-power chips such as power amplifiers and high-power switches, the chip temperature rises significantly during operation. Therefore, the influence of thermal effects on device and circuit performance must be considered in the design process of microwave monolithic integrated circuits (MMIC). The device model is required to have the function of describing the interaction between thermal effects and electrical properties. This model is the so-called thermoelectric coupling model. Transistor is the device with the most obvious thermal effect in high-power chips, and the accuracy of its thermoelectric coupling model directly affects the success rate of circuit design. [0003] At present, the thermoelectric coupling model of transi...

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Problems solved by technology

[0004] The purpose of the present invention is to address the deficiencies in the prior art, and provide a thermoelectric coupling model establishment method applied to MMIC design, which can well solve the problem of large-scale semiconductor transistors in the prior art. When modeling, it is difficult to extract thermoelectric coupling parameters and parasitic parameters, and the model accuracy is not high

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