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Transparent OLED device structure and preparation method thereof

A device structure and transparent technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve problems affecting conductivity and luminous efficiency, and achieve improved transmittance, light extraction efficiency, and increased light intensity. Effect

Active Publication Date: 2017-07-04
西安拓创光芯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially as the cathode of a transparent OLED, in order to achieve transparency, the cathode layer must be made very thin, but this will affect its conductivity and luminous efficiency, etc.

Method used

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  • Transparent OLED device structure and preparation method thereof
  • Transparent OLED device structure and preparation method thereof
  • Transparent OLED device structure and preparation method thereof

Examples

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preparation example Construction

[0028] A preparation process of a transparent OLED comprises a new mesh reticle with an aperture size of 10-500 μm used in the preparation of the device. The thickness of the new mesh reticle is 0.1-0.5 mm, and the shape of the mesh of the reticle can be circle, rhombus, pentagon and hexagon. In addition, in addition to the above-mentioned mesh structure part, a 0.5-0.6 mm etched band part should be reserved.

[0029] Such as figure 2 As shown, the mesh reticle can be applied to prepare OLED cathodes by high vacuum evaporation or magnetron sputtering. And using the mask to prepare transparent OLED can greatly improve the transmittance and efficiency of the device. The material of the new mesh mask is stainless steel alloy sheet or nylon. The thickness of the new mesh reticle is 0.1-0.5mm. The shape of the mesh of the mesh mask plate can be circle, rhombus, square, hexagon and other graphics that can be planarly densely laid. In addition to the above-mentioned mesh struct...

Embodiment 1

[0032] A preparation process of a transparent OLED includes a novel mesh mask plate with an aperture size of 10-500 μm used in the preparation of the device. Wherein, the thickness of the new mesh reticle is 0.1-0.5 mm, and the shape of the mesh of the reticle can be circle, rhombus, pentagon and hexagon. The method of laser engraving is specifically the method of YAG laser combined with dot matrix engraving to obtain various mesh patterns.

[0033] The preparation process is as follows:

[0034] Step 1, preparation of the mask plate: engrave regularly arranged circular small holes on the stainless steel alloy sheet by laser engraving, the radius of the aperture is about 10 μm (the size of the aperture is 20 μm);

[0035] Step 2, device preparation: the device structure is Glass / ITO / MoO 3 / NPB / Mcp:FIrpic / CBP:R-4B:Ir(ppy) 2 (acac) / BCP / Alq 3 / LiF / Ag:Al (3:1), after vapor-depositing each organic functional layer in sequence, finally vapor-deposit silver-aluminum alloy cathode...

Embodiment 2

[0038] A preparation process of a transparent OLED comprises a new mesh reticle with an aperture size of 10-500 μm used in the preparation of the device. Wherein, the thickness of the new mesh reticle is 0.1-0.5 mm, and the shape of the mesh of the reticle can be circle, rhombus, pentagon and hexagon. The method of laser engraving is specifically the method of YAG laser combined with dot matrix engraving to obtain various mesh patterns.

[0039] The preparation process is as follows:

[0040] Step 1, preparation of the mask plate: engrave regularly arranged diamond-shaped small holes on the stainless steel alloy sheet by laser engraving, and the side length of the rhombus is about 20 μm;

[0041]Step 2, device preparation: the device structure is Glass / ITO / MoO 3 / NPB / Mcp:FIrpic / CBP:R-4B:Ir(ppy) 2 (acac) / BCP / Alq 3 / LiF / Ag:Al (3:1), after vapor-depositing each organic functional layer in sequence, finally vapor-deposit silver-aluminum alloy cathode with a mesh mask.

[0042...

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Abstract

The invention discloses a transparent OLED device structure and a preparation method thereof. The transparent OLED device structure comprises a novel net-shaped mask template whose aperture size is 10-500 [mu]m used in preparation of the device. The thickness of the novel net-shaped mask template is 0.1-0.5 mm. The shape of the novel net-shaped mask template can be circle, rhombus, pentagon and hexagon. For the novel net-shaped mask template, all kinds of net hole patterns are obtained by use of the method of laser carving, particularly the method combining YAG laser and lattice craving. According to the invention, the anode in shape of a net hole screen is different from a traditional anode which is obtained in whole-sheet type evaporation, so when the thickness of the device is reduced, the transmittance of the transparent device is improved.

Description

technical field [0001] The invention belongs to the technical field of OLED display and illumination, and in particular relates to a transparent OLED device structure and a preparation method thereof. Background technique [0002] Transparent OLED (TOLED) has attracted much attention due to its application in full-color display and lighting, and its ability to solve the problem of low aperture ratio caused by TFT arrays. The light emitted by a general OLED device is emitted through the substrate, that is, bottom emission. The so-called top emission means that the light does not pass through the substrate but is emitted from the opposite direction. If traditional transparent ITO is used as the anode material and a transparent cathode is used, both sides of the device will emit light, which is the so-called transparent or penetrating device. [0003] A transparent OLED display device requires that the substrate and electrodes constituting the OLED be made of transparent mate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/56
CPCH10K50/822H10K50/828H10K50/85H10K71/00
Inventor 张方辉刘晋红张婵婵
Owner 西安拓创光芯科技有限公司
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