Capacitive sound acquisition device and microphone

A sound collection device and capacitive technology, applied in the field of microphones, can solve the problems of consumer electronics inconvenience, large polarization voltage, and low sensitivity, and achieve the effects of compact overall structure, good tension performance, and wide frequency characteristics

Inactive Publication Date: 2017-07-07
BEIJING SAIBIN TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under normal circumstances, the thickness of the metal film is on the order of microns, so the sensitivity is relatively low, but if the metal film is made too thin, the strength will be poor after the sensitivity is increased.
In addition, the electret microphone requires a large polarization voltage (tens of volts to hundreds of volts) during operation, which brings inconvenience to the use of consumer electronics

Method used

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  • Capacitive sound acquisition device and microphone
  • Capacitive sound acquisition device and microphone
  • Capacitive sound acquisition device and microphone

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] In a specific embodiment, such as figure 2 As shown, the microphone has a housing 5, and the capacitive sound collection device is inside the housing. The graphene diaphragm 1 is pre-polarized and has a resident charge 2, so that the air between the graphene diaphragm 1 and the back electrode 3 A prepolarization electric field 4 is formed in the gap, and the potential of this electric field is generally 200-300 volts.

[0026] One side of the shell 5 is open and covers the dust cover 6 , and the graphene diaphragm 1 is located between the dust cover 6 and the back electrode 3 . The back electrode 3 is connected to the field effect transistor 9 on the circuit board 8 through the spring 7 .

[0027] Further, a deck 10 is provided on the inner wall of the housing 5 , and the graphene diaphragm 1 is fixed on the deck 10 .

[0028] The prepolarized graphene diaphragm 1 can be obtained by redox method, ultrasonic stripping ion adsorption method and other methods. The spec...

Embodiment 2

[0038] In another specific embodiment, such as image 3 As shown, the microphone has a housing 5, the capacitive sound collection device is inside the housing, and the side of the back electrode 3 facing the graphene diaphragm 1 (30 layers) covers the electret layer 11. The electret layer 11 carries resident charges 2, and a prepolarization electric field 4 is generated in the air gap between the electret layer 11 and the graphene diaphragm 1, and the electric field potential is about 200-300 volts at this time.

[0039] One side of the shell 5 is open and covers the dust cover 6 , and the graphene diaphragm 1 is located between the dust cover 6 and the back electrode 3 . The back electrode 3 is connected to the field effect transistor 9 on the circuit board 8 through the spring 7 . A deck 10 is provided on the inner wall of the housing 5 , and the graphene diaphragm 1 is fixed on the deck 10 .

[0040]The material of the electret layer 11 can be but not limited to Teflon, p...

Embodiment 3

[0044] In another specific embodiment, such as Figure 4 As shown, the microphone has a housing 5, the capacitive sound collection device is inside the housing 5, and the side of the graphene diaphragm 1 (30 layers) facing the back electrode 3 is covered with a 20 micron Teflon electret layer 11. There are resident charges 2 on the electret layer 11, and a prepolarization electric field 4 is generated in the air gap between the electret layer 11 and the graphene diaphragm 1, and the electric field potential is 250 volts at this time.

[0045] One side of the shell 5 is open and covers the dust cover 6 , and the graphene diaphragm 1 is located between the dust cover 6 and the back electrode 3 . The back electrode 3 is connected to the field effect transistor 9 on the circuit board 8 through the spring 7 . A deck 10 is provided on the inner wall of the housing 5 , and the graphene diaphragm 1 with an electret layer 11 is fixed on the deck 10 .

[0046] The sensitivity of the m...

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PUM

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Abstract

The invention provides a capacitive sound acquisition device. The capacitive sound acquisition device comprises a graphene vibrating diaphragm and a back electrode parallel to the graphene vibrating diaphragm. A prepolarized electric field is generated between the graphene vibrating diaphragm and the back electrode. The capacitive sound acquisition device is arranged in an inner cavity formed by a shell of a microphone. One side of the shell is provided with an opening and a dust cover covers the opening. The graphene vibrating diaphragm is located between the dust cover and the back electrode. In the invention, under an equal tension intensity condition, sound acquisition sensitivity is greatly increased, or under a same sensitivity condition, high tension strength is acquired, which means that a maximum tolerable sound pressure characteristic is increased, and simultaneously a wide frequency width is possessed.

Description

technical field [0001] The invention relates to the field of microphones, in particular to a capacitive sound collection device and a microphone. Background technique [0002] Electret microphones are widely used in the consumer electronics industry. The principle is that a capacitor cavity is formed between the metal film (generally 0.3mm thick) electroplated on the plastic film substrate and the back electrode (the distance is generally 0.03-0.05mm), such as figure 1 It shows the solution of setting an electret film on the metal diaphragm in the prior art. When the metal diaphragm is deformed by external sound pressure, it will change the capacitance of this capacitor, thereby forming a current in the circuit, thereby realizing Conversion from sound to electricity. In general, the thickness of the metal film is on the order of microns, so the sensitivity is relatively low, but if the metal film is made too thin, the strength will be poor after the sensitivity is increase...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04R19/04
Inventor 张德明
Owner BEIJING SAIBIN TECH
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