Novel graphene thin film transferring method and preparation method of sensor
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 成都川烯科技有限公司
- Publication Date
- 2017-07-14
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the technical field of graphene, and in particular to a method for transferring a novel graphene film and a method for preparing a sensor. Background technique
[0002] Graphene is a single atomic layer two-dimensional crystal with carbon atoms tightly packed in a hexagonal structure. Graphene has excellent properties such as extremely high carrier mobility, high light transmittance, and high strength. It has a huge potential in electronic devices. Value. In order to fabricate graphene electronic devices, large-scale graphene films with excellent electrical properties must first be fabricated and transferred to a suitable target substrate. The transfer technology of graphene film is the key factor restricting the development of graphene film.
[0003] At present, the transfer of graphene film is mainly through PMMA method, resin transfer method or thermal release tape method, but there are certain operational difficulties or ...