Fabrication method of low-temperature poly-silicon thin film transistor

A technology of thin-film transistors and low-temperature polysilicon, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of reducing manufacturing costs and inaccurate alignment, and achieve simple process, easy operation, and avoid inaccurate alignment Effect

Inactive Publication Date: 2017-07-14
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a method for manufacturing a low-temperature polysilicon thin film transistor, which can improve the problem of

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  • Fabrication method of low-temperature poly-silicon thin film transistor
  • Fabrication method of low-temperature poly-silicon thin film transistor
  • Fabrication method of low-temperature poly-silicon thin film transistor

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Embodiment Construction

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0031] In addition, the following descriptions of the various embodiments refer to the attached drawings to illustrate specific embodiments in which the present invention can be implemented. The directional terms mentioned in the present invention, for example, "upper", "lower", "front", "rear", "left", "right", "inner", "outer", "side", etc., only is to refer to the direction of the attached drawings. Therefore, the direction terms used are for ...

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Abstract

The embodiment of the invention provides a fabrication method of a low-temperature poly-silicon thin film transistor. The fabrication method comprises the steps of providing a substrate, wherein a poly-silicon layer is formed on the substrate and comprises a first region, a second region and a third region; coating photoresist on the first region and the second region, and performing exposure and first developing to form a photoresist layer; performing a first doping process by taking the photoresist layer as shading so as to form a heavy-doping region on the third region; performing second developing on the photoresist layer so that the second region is exposed; and performing a second doping process by taking the photoresist layer after the second developing as shading so as to form a light doping region on the second region. By the method, a process of yellow light and photoresist stripping can be omitted, and the process cost is reduced.

Description

technical field [0001] The invention relates to a thin film transistor, in particular to a manufacturing method of a low temperature polysilicon thin film transistor. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFTLD) can be divided into polysilicon and amorphous silicon, the difference between the two lies in the characteristics of the transistor. The electron mobility of polysilicon is higher than that of disordered amorphous silicon, so it has been widely used. Polysilicon mainly includes high temperature polysilicon and low temperature polysilicon (Low Temperature Poly-silicon, abbreviation: LTPS) two products. [0003] TFTs made of low-temperature polysilicon are divided into two types: N-type and P-type. N-type low-temperature polysilicon TFTs need to be provided with a low-doped drain (Lightly Drain Doping, LDD) to reduce the leakage current between the source and drain. The existing LDD process mainly uses ion implantation masks to ac...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/786H01L21/266
CPCH01L29/66492H01L21/26506H01L21/266H01L29/6675H01L29/78618H01L29/78672
Inventor 唐敏
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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