Chip resistor element and method for forming same

Abstract

Provided are a chip resistor element and a method for forming the same. The chip resistor element includes an insulating substrate, a resistor layer, first and second internal electrodes, a resistor protection layer, first and second electrode protection layers, and first and second external electrodes. The resistor layer is on the insulating substrate, the first and second internal electrodes are on respective sides of the resistor layer, and the resistor protection layer covers the resistor layer and extends onto portions of the internal electrodes. The first electrode protection layers are on the first and second internal electrodes so as to overlap with portions of the resistor protection layer and contain first conductive powder particles and resin, while the second electrode protection layers are disposed on the first electrode protection layers and contain second conductive powder particles and resin. A content of resin in the second electrode protection layer is lower than in the first electrode protection layer.

Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2016-0002698 filed with the Korean Intellectual Property Office on Jan. 8, 2016, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0002] The present disclosure relates to a chip resistor element. Background technique [0003] Generally, when a chip resistor element is used for a long time while being exposed to the external environment, undesired reactions occur in components of the chip resistor element such as internal electrodes, deteriorating the reliability of the chip resistor element. Reduced, or the performance of chip resistor components will be lost. For example, metals such as silver (Ag) that are commonly used as materials for internal electrodes can be easily sulfided, forming undesired reactants (e.g., Ag 2 S), leading to disconnection. [0004] Generally, in order to solve these problems, a method of replacing the interna...

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Problems solved by technology

However, according to this method, it is difficult to ensure a high level of electrical conductivity, and also the plating characteristics are lowered so that the plating layer for the external electrodes cannot be properly formed or the adhesive strength of the plating layer with respect to the underlying structure is lowered, so that problems such as layered problem

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