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A kind of method for preparing iridium single crystal

A single crystal, electron gun technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of no iridium single crystal growth method, difficult to control the length of the melting zone, and high iridium density.

Inactive Publication Date: 2019-01-18
NORTHWESTERN POLYTECHNICAL UNIV
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Problems solved by technology

[0007] In order to overcome the disadvantages in the prior art that there is no growth method for iridium single crystals due to the high density of iridium and the difficulty in controlling the length of the melting zone, the present invention proposes a method for preparing iridium single crystals

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  • A kind of method for preparing iridium single crystal
  • A kind of method for preparing iridium single crystal
  • A kind of method for preparing iridium single crystal

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Embodiment Construction

[0041] This embodiment is a method for preparing a rare and precious metal iridium single crystal using a vacuum electron beam zone melting furnace as the equipment and using the electron beam suspension zone melting technology. The specific process is:

[0042] Step 1, calibrate the iridium rod. The iridium rod diameter is Φ6mm, long 300mm, the electron gun is annular, and the iridium rod is placed vertically at the ring center of the electron gun; the initial position of the electron gun is located at 50mm away from the lower end surface of the iridium rod. During zone melting, the direction of electron gun travel is from bottom to top. The straightness of the iridium rod affects the feeding balance in the melting zone, so the straightness of the iridium rod is required to be ≤1mm / m. The iridium rod is repeatedly clamped and corrected in a vise until the conditions are met. After calibration, there will be new impurities on the surface of the iridium rod. Use 1500# sandpa...

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Abstract

Provided is a method for preparing iridium single crystal. Against problems that the iridium density is high and it is difficult to control melting zone length, an electron beam suspension area smelting technology is utilized to prepare iridium single crystal. During preparation, by reasonable control over current parameters, a melting zone is maintained between an original material rod and a solidified material rod by means of surface tension, the melting zone is solidified directionally when an electronic gun moves slowly in the length direction, and thus the melting zone grows into the single crystal in the length direction of the whole material rod. By reasonable control over the electronic gun walking speed, namely the directional solidification rate, the iridium single crystal is obtained. The method has repeatability in the preparation process, and a success can be achieved in repeated under the same conditions.

Description

technical field [0001] The invention relates to the field of metal directional solidification manufacturing, in particular to a method for preparing a rare metal iridium single crystal by using an electron beam suspension zone melting technique (EBFZM). Background technique [0002] Iridium is a platinum group metal with a high melting point (2443°C) and a high density (22.42g / cm 3 ), high hardness (elastic modulus (E=527GPa, Poisson's ratio μ=0.26), good high temperature performance, stable chemical properties, can be applied to 2300°C in an oxidizing atmosphere, and is the only one that can still have good mechanical properties above 1600°C High-performance metals. At present, iridium has been used in high-tech fields such as aerospace, high-energy physics, weapons, mechatronics, and medicine. For example: in the growth of the heart component of high-quality high-power lasers-single crystal yttrium aluminum garnet (melting point close to 2000 ℃ ), using a single crystal i...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B13/22C30B13/28C30B29/02
CPCC30B13/22C30B13/28C30B29/02
Inventor 王斌强李双明钟宏胡锐杨劼人刘毅罗锡明
Owner NORTHWESTERN POLYTECHNICAL UNIV
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