Method for making photodiode, photodiode and light sensor

Abstract

Provided is a method for manufacturing a photodiode, comprising: forming a photodiode PN junction in a semiconductor substrate, wherein the photodiode PN junction is synchronously formed with an active device in an analogue circuit; forming a multi-layer structure on the semiconductor substrate by deposition; forming a window in the multi-layer structure, wherein the window is located above the photodiode PN junction; and depositing silicon nitride and / or silicon dioxide on the surface of the window area to form a reflecting layer.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a method for making a photodiode, a photodiode and a light sensor. Background technique [0002] Light Emitting Diode (English for Light Emitting Diode, LED for short) is a kind of semiconductor diode, which can convert electrical energy into light energy, and emit visible light of various colors such as yellow, green, and blue, as well as infrared and ultraviolet invisible light. Compared with small incandescent bulbs and neon lamps, it has the advantages of low operating voltage and current, high reliability, long life and convenient adjustment of luminous brightness. [0003] Nowadays, with the development of semiconductor process technology, the integration of photodiodes and components in analog circuits has become one of the focuses of people's attention. The components in the analog circuit can be bipolar junction transistors (BipolarJunction Transistor, BJT), metal oxide semic...

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Problems solved by technology

[0004] Based on this, it is necessary to provide a photodiode integrated in the analog circuit for the problem that the photodiode and the analog circuit cannot be integrated on the same chip and the cost is high while keeping the performance of the components in the original process unchanged. Method of Diodes, Photodiodes and Light Sensors

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