Method for making photodiode, photodiode and light sensor

A photodiode and anode technology, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problems of high cost, photodiode and analog circuit are integrated in the same chip, etc., and achieve the effect of low cost and simple process.

Active Publication Date: 2018-10-12
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
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Problems solved by technology

[0004] Based on this, it is necessary to provide a photodiode integrated in the analog circuit for the problem that the photodiode and the analog circuit cannot be integrated on the same chip and the cost is high while keeping the performance of the components in the original process unchanged. Method of Diodes, Photodiodes and Light Sensors

Method used

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  • Method for making photodiode, photodiode and light sensor
  • Method for making photodiode, photodiode and light sensor
  • Method for making photodiode, photodiode and light sensor

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Embodiment Construction

[0046] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0047] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of ...

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Abstract

Provided is a method for manufacturing a photodiode, comprising: forming a photodiode PN junction in a semiconductor substrate, wherein the photodiode PN junction is synchronously formed with an active device in an analogue circuit; forming a multi-layer structure on the semiconductor substrate by deposition; forming a window in the multi-layer structure, wherein the window is located above the photodiode PN junction; and depositing silicon nitride and / or silicon dioxide on the surface of the window area to form a reflecting layer.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a method for making a photodiode, a photodiode and a light sensor. Background technique [0002] Light Emitting Diode (English for Light Emitting Diode, LED for short) is a kind of semiconductor diode, which can convert electrical energy into light energy, and emit visible light of various colors such as yellow, green, and blue, as well as infrared and ultraviolet invisible light. Compared with small incandescent bulbs and neon lamps, it has the advantages of low operating voltage and current, high reliability, long life and convenient adjustment of luminous brightness. [0003] Nowadays, with the development of semiconductor process technology, the integration of photodiodes and components in analog circuits has become one of the focuses of people's attention. The components in the analog circuit can be bipolar junction transistors (BipolarJunction Transistor, BJT), metal oxide semic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/103H01L31/0232H01L31/18H01L27/06H01L21/822H01L21/311
CPCH01L27/146
Inventor 宋华杨欢
Owner CSMC TECH FAB2 CO LTD
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