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Copper and titanium composition for metal layer etching solution

A technology of composition and etching solution, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of slow etching rate and unstable composition time, achieve fast etching rate, excellent etching performance, and simplify etching The effect of steps

Inactive Publication Date: 2017-08-01
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of potassium persulfate-based etchant compositions, the etch rate is slow and the composition becomes unstable over time

Method used

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  • Copper and titanium composition for metal layer etching solution
  • Copper and titanium composition for metal layer etching solution
  • Copper and titanium composition for metal layer etching solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～6、 comparative example 1～4

[0037] Embodiments 1-6, Comparative Examples 1-4: Preparation of etching solution composition

[0038] 180 kg of an etching liquid composition was prepared using the amounts of components shown in Table 1 below.

[0039] Table 1

[0040]

[0041]

[0042] APS: ammonium persulfate

[0043] ABF: Ammonium bifluoride

[0044] ATZ: 5-Aminotetrazole

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Abstract

The present invention relates to a copper and titanium composition for a metal etching solution, comprising the following, based on the total weight of the composition: 5 to 20 wt % of persulfate; 0.01 to 2 wt % of a fluorine compound; 1-10 wt % of an additive containing one or more acids selected from inorganic acids, salts of inorganic acids, and a mixture thereof; 0.3 to 5 wt% of a cyclic amine compound; 0.01 to 8 wt % of an additive containing one or more compounds selected from a chlorine compound and cupric salts; and with the remainder being water.

Description

[0001] This application is a divisional application of an invention patent application with an application date of April 28, 2011, an application number of 201180016129.6, and an invention title of "Etching solution composition for metal layers containing copper and titanium". technical field [0002] The present invention relates to an etchant composition for a metal layer containing copper and titanium, and the etchant composition is used for gate, source / drain wiring, and electrodes for semiconductor devices and flat panel displays, especially It is an electrode for a thin film transistor (TFT). [0003] This application claims the benefit of Korean Patent Application No. 10-2010-0039822, filed April 29, 2010, and Korean Patent Application No. 10-2010-0040567, filed April 30, 2010, which are incorporated by reference in their entirety incorporated into this application. Background technique [0004] In semiconductor devices and flat panel displays, the process of forming...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/42H01L21/3213
CPCC23F1/42H01L21/32134C23F1/16C23F1/02C23F1/18C23F1/26
Inventor 林玟基权五柄李喻珍刘仁浩李俊雨朴英哲张尚勋
Owner DONGWOO FINE CHEM CO LTD
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