Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and system for improving process uniformity

A technology for supporting bases and semiconductors, applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of limiting the amount or degree of modification, difficulty in maintaining uniformity across substrates, and difficulty in controlling the uniformity of removal operations. To achieve the effect of increasing the usable area

Active Publication Date: 2020-08-21
APPLIED MATERIALS INC
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Often when etch or remove operations are performed, uniformity across the substrate is difficult to maintain
[0003] In many cases, maintaining uniformity of removal can be difficult to control based on chamber configuration or process conditions
Although process conditions may be adjusted, tolerances in process conditions may limit the amount or degree of modification
For this reason, homogeneity can only be controlled to a limited extent by process conditions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and system for improving process uniformity
  • Method and system for improving process uniformity
  • Method and system for improving process uniformity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] This technology includes systems and components for semiconductor processing. The processing chamber has a characteristic operating profile based on multiple factors including operating conditions, precursor delivery, and chamber configuration. For example, the processing chamber that delivers the precursor to the substrate processing area may not uniformly deliver the precursor into the space. The precursor may be transported from the edge of the chamber toward the center of the chamber, which may expose the edge area of ​​the substrate to more precursor components than the central area of ​​the substrate. In addition, the precursor can be transported outward from the central area, which can expose the central area of ​​the substrate to more precursor components than the edge areas. Although there are multiple chamber components (including gas boxes) that can be used to improve the uniformity of delivery, variations can still exist in precursor delivery across the cros...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled to the remote plasma region. The processing area may be configured to receive a substrate on a support base. The support base may comprise a first material at an inner side region of the base. The support base may also include an annular member coupled to the remote portion of the base or at an outer region of the base. The annular member may comprise a second material different from the first material.

Description

Technical field [0001] This technology relates to semiconductor processes and equipment. More specifically, the present technology relates to improving process uniformity during etching operations. Background technique [0002] The integrated circuit can be manufactured by a process of producing a material layer with a complex pattern on the surface of the substrate. The production of patterned material on the substrate requires a controlled method to remove the exposed material. The same procedure can be performed on multiple substrates, and the process conditions and results are usually kept within strict tolerances. Generally when etching or removal operations are performed, uniformity across the substrate is difficult to maintain. [0003] In many cases, the uniformity maintenance of the removal operation may be difficult to control based on the chamber configuration or process conditions. Although process conditions can be adjusted, tolerances in process conditions may lim...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32357H01J37/32715H01J37/32724H01J37/32449H01J37/32522H01L21/67069H01L21/3065H01J2237/2001H01J2237/334
Inventor S·辛格A·曹张景春李子汇张汉申D·卢博米尔斯基
Owner APPLIED MATERIALS INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com