Semiconductor device structure and manufacturing method thereof, array substrate and display device

Abstract

The invention discloses a semiconductor device structure and a manufacturing method thereof, an array substrate and a display apparatus. The semiconductor device structure comprises at least one first transistor and at least one second transistor, which are arranged on a substrate. The first transistor comprises a first grid electrode, a first source electrode, a first drain electrode and a first channel region, wherein the first source electrode, the first drain electrode and the first channel region are formed by polycrystalline silicon; the second transistor comprises a second grid electrode, a first region, a second region and a second channel region, wherein the first region, the second region and the second channel region are formed by oxide semiconductor; the first region is electrically connected with the first source electrode and / or the first drain electrode; and the distance between the first region and the substrate is larger than the distance between the second region and the substrate. According to the scheme, an active layer of the second transistor is arranged in a manner of having height difference in the direction vertical to the substrate, and the channel region is formed by utilizing the height difference, thereby improving on-state current; and besides, through voltage division of the first transistor, reliability is enhanced, and the semiconductor device structure having high on-state current and low off-state current is realized.

Description

technical field [0001] The present application generally relates to the field of display technology, and in particular relates to a semiconductor device structure and a manufacturing method thereof, an array substrate and a display device. Background technique [0002] With the continuous development of technology, large size and high resolution have become the development trend of flat panel display, and the mobility of thin film transistors (Thin Film Transistor, TFT) required for large size and high resolution display panels has also increased accordingly. . [0003] Low Temperature Poly-Silicon (LTPS) TFT has high mobility (>100cm 2 V -1 the s -1 ), strong driving ability (on-state current can be greater than 5E-5A), etc., but off-state current (or leakage current) large (>1E-12A) has become a restrictive factor for its development. [0004] In contrast, Indium Gallium Zinc Oxide (IGZO) TFT can have better mobility (10-25cm 2 V -1 the s -1 ) and better off-s...

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Problems solved by technology

[0003] Low Temperature Poly-Silicon (LTPS) TFT has high mobility (>100cm 2 V -1 the s -1 ), strong driving ability (on-state current can be greater than 5E-5A), etc., but off-state current (or leakage current) large (>1E-12A) has become a restrictive factor for its development

[0004] In contrast, Indium Gallium Zinc Oxide (IGZO) TFT can have better mobility (10-25cm 2 V -1 the s -1 ) and better off-state current (1E-14A), but correspondingly, its on-state current is also lower (1E-5A, about one-fifth of LTPS-TFT)

Moreover, in the existing production process, the channel length can usually be about 3 μm. Due to the constraints of process conditions and yield, it is difficult to further reduce the channel length. That is to say, the existing process cannot reduce the channel length. to further increase the on-state current

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