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Film forming method and film forming apparatus

A film-forming method and film-forming technology, applied in lighting devices, gaseous chemical plating, coatings, etc., can solve the problems of being thin and light, and achieve the effect of high moisture resistance and thin moisture resistance

Active Publication Date: 2017-08-18
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the above-mentioned method, although the resistance to moisture is high, a certain degree of thickness is required as an organic EL device as a whole.
Therefore, the original advantages of organic EL elements such as thinness, lightness, and bendability cannot be exerted

Method used

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  • Film forming method and film forming apparatus
  • Film forming method and film forming apparatus
  • Film forming method and film forming apparatus

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0063] [Structure of Film Formation Apparatus 10 ]

[0064] figure 1 It is a longitudinal sectional view showing an example of the film forming apparatus 10 of the first embodiment. The film forming apparatus 10 is configured as a plasma processing apparatus using inductively coupled plasma (ICP: Inductively Coupled Plasma). The film forming apparatus 10 includes, for example, a rectangular tube-shaped airtight processing container 1 made of aluminum whose inner wall surface is anodized. The processing container 1 is assembled in a detachable manner, and is grounded through a ground wire 1a. The processing container 1 is vertically divided into an antenna chamber 3 and a processing chamber 4 by a dielectric wall 2 . The dielectric wall 2 forms the top wall of the processing chamber 4 . The dielectric wall 2 is for example made of Al 2 o 3 Such as ceramic or quartz composition.

[0065] A shower housing 11 for supplying process gas is fitted in a lower portion of the die...

no. 2 approach

[0121] Next, a second embodiment will be described. The sealing film of this embodiment is different from the sealing film of the first embodiment in that it has a multilayer structure. In addition, the structure and use of the film forming apparatus 10 used in this embodiment figure 1 as well as figure 2 The configuration of the film forming apparatus 10 of the first embodiment described above is the same, and thus detailed description thereof will be omitted. In addition, the outline of the manufacturing procedure of the light-emitting module 100 of this embodiment is also the same as the image 3 The outline of the manufacturing procedure of the light-emitting module 100 of the first embodiment described is the same, and therefore detailed description will be omitted except for the content described below.

[0122] [Structure of light emitting module 100]

[0123] Figure 7 It is a sectional view showing an example of the structure of the light emitting module 100 of ...

no. 3 approach

[0143] Next, a third embodiment will be described. The sealing film of the present embodiment is different from the sealing film of the second embodiment in that the fluorine-added second film 108 has a fluorine concentration gradient in the thickness direction. In addition, the structure and use of the film forming apparatus 10 used in this embodiment figure 1 as well as figure 2 The film formation apparatus 10 according to the first embodiment described has the same configuration, and thus detailed description thereof will be omitted. In addition, the outline of the manufacturing procedure of the light-emitting module 100 of this embodiment is also the same as the image 3 The outline of the manufacturing procedure of the light-emitting module 100 according to the first embodiment described is the same, and therefore detailed description is omitted except for the content described below.

[0144] [Structure of light emitting module 100]

[0145] Figure 11 It is a sect...

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PUM

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Abstract

The invention provides a film forming method and film forming apparatus. A method of forming a sealing film 105 for sealing an organic EL element 106 formed on a glass substrate G comprises: a step of supplying, into a processing container 1, mixture gas containing silicon-contained gas and halogen-element-contained gas, or mixture gas containing silicon-contained gas and gas containing a functional group having a higher electrical negative property than nitrogen; a step of generating plasma of the mixture gas in the processing container 1; and a film forming step of forming the sealing film 105 of the mixture gas activated by plasma so as to cover the organic EL element 106.

Description

technical field [0001] Various aspects and embodiments of the present invention relate to a film forming method and a film forming apparatus. Background technique [0002] Organic EL (Electro-Luminescence) devices that emit light using organic compounds generally have a structure in which an organic layer formed on a glass substrate is sandwiched between an anode layer (anode) and a cathode layer (cathode). The organic layer is weak in water repellency, and if water is mixed, the characteristic changes to generate non-luminescent spots (dark spots), which is a factor of shortening the life of the organic EL element. Therefore, it is very important to improve the airtightness of the membrane in order not to permeate external moisture and oxygen. [0003] As a method of protecting the organic layer from external moisture or the like, for example, a method of using an airtight can made of aluminum or the like has been proposed (for example, refer to Patent Document 1). Accord...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/52H05B33/04
CPCH05B33/04H10K50/844H10K71/00H01L21/02274H01L21/0228H01L21/02315H01L21/02123C23C16/345C23C16/56H10K2102/351H01L21/0262
Inventor 山田一希加藤大辉大内健次松崎和爱
Owner TOKYO ELECTRON LTD