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A kind of UV photosensitive negative pure acrylic photoresist and preparation method thereof

A technology of photoresist and pure acrylic, which is applied in the direction of optomechanical equipment, photosensitive material processing, optics, etc., can solve the problems of low resolution, unfavorable human health, etc., and achieve good permeability, small diffraction effect, and large contrast Effect

Active Publication Date: 2020-06-09
WUXI DERBELL PHTO ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to improve the resolution of the photoresist, people have been continuously improving the photoresist, but the wavelength of the ultraviolet exposure light source suitable for the existing photoresist is generally between 300 and 400nm, so the problem of low resolution is common.
[0004] Most of the photoresists used in the preparation process of PCB boards now contain inorganic fillers, and most of the inorganic fillers are powders with finer particles. A large amount of dust generated during the addition process is extremely harmful to human health.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0034] Example 1, add respectively 15 Kg of styrene, 30 Kg of methyl methacrylate, 3 Kg of n-butyl methacrylate, 7.5 Kg of azobisisobutyronitrile and 9 Kg of isobornyl acrylate in drip irrigation, and stir at room temperature for 0.8 Hour; In reactor, add propylene glycol methyl ether acetate 64.5Kg, stir and its temperature rises to 90 DEG C; The mixed solution in drip irrigation is dripped in reactor, after dripping completes, insulation reaction waits for system acid value After cooling to normal temperature after 65°C, 129Kg of light yellow finished acrylated polyacrylic acid resin was obtained.

example 2

[0035] Example 2: After adding 18Kg of styrene, 37.5 Kg of methyl methacrylate, 7.5 Kg of n-butyl methacrylate, 12 Kg of azobisisobutyronitrile and 13.5Kg of isobornyl acrylate in drip irrigation, stir at room temperature for 0.8 Hour; In reactor, add propylene glycol methyl ether acetate 97Kg, stir and its temperature rises to 90 DEG C; The mixed solution in drip irrigation is dripped in reactor, after dripping, insulation reaction treats system acid value After 65°C, the temperature was lowered to normal temperature to obtain 185.5 Kg of light yellow finished acrylated polyacrylic acid resin.

example 3

[0036] Example 3. Add 60Kg of styrene, 150 Kg of methyl methacrylate, 30 Kg of n-butyl methacrylate, 48 Kg of azobisisobutyronitrile and 54Kg of isobornyl acrylate in drip irrigation, and then stir at room temperature for 0.8 hours Add propylene glycol methyl ether acetate 388Kg in reactor, stir and its temperature rises to 90 DEG C; The mixed solution in drip irrigation is dripped in reactor, and insulation reaction treats that system acid value is 65 after dripping completes After cooling down to normal temperature, 730Kg of light yellow finished product acrylated polyacrylic acid resin was obtained.

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PUM

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Abstract

The invention relates to a UV photosensitive negative pure acrylic photoresist. The UV photosensitive negative pure acrylic photoresist comprises, by weight, 25 to 60% of acrylic esterified polyacrylic resin, 0.5 to 5% of a photosensitizer, 5 to 20% of an active monomer, 20 to 55% of propylene glycol methyl ether acetate, 5 to 20% of a ketone solvent and 5 to 15% of propylene glycol methyl ether. The invention also relates to a preparation method of the UV photosensitive negative pure acrylic photoresist. The UV photosensitive negative pure acrylic photoresist has the advantages of small diffraction effect, high resolution, high sensitivity, large contrast, good permeability and good anti-etching ability.

Description

technical field [0001] The invention relates to a UV photosensitive negative pure acrylic photoresist, in particular to a UV photosensitive negative pure acrylic photoresist and a preparation method thereof. Background technique [0002] In the preparation process of PCB board, photoresist is the key functional material for photolithography process. Photolithography is a precision surface processing technology that combines pattern printing and chemical etching. To put it simply, photocopying is used to transfer the pattern on the mask plate to the photoresist on the surface of the silicon wafer to achieve subsequent selective etching. It is the most important process in PCB board manufacturing, accounting for about half of the steps in circuit board manufacturing and high cost. The photoresist is particularly important as the main material in the photolithography process. Photoresists can be divided into two categories: photopolymerizable negative-working photoresists an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42
CPCG03F7/422
Inventor 朱贤红胡耀东
Owner WUXI DERBELL PHTO ELECTRONICS MATERIAL
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