Apparatus and method for managing breakdown of eeprom memory access transistors

Abstract

A non-volatile electrically erasable and programmable memory type memory device is provided, comprising, a matrix memory plate (PM) of memory cells (CEL) connected to bit lines (BL), configured to select the memory cells (CEL) and apply a programming pulse (VSBL) to the programming device (MPR) corresponding to the bit line (BL). According to the usual features, the memory plate (PM) is located in a partial well (PW) at a floating potential, and the programming means (MPR) is configured to increase the potential of said partial well (PW) while simultaneously applying a programming pulse to the selected The bit line (BL) of the memory cell (CEL).

Description

technical field [0001] Various embodiments of the invention relate to memory, particularly electrically erasable and programmable (EEPROM) type non-volatile memory. Background technique [0002] In EEPROM memory, the logic value of a bit is stored in a memory cell, which typically includes an access transistor and a state transistor with a control gate and a floating gate. [0003] The programming or erasing of floating gate transistors consists in the transfer of charge through the tunneling effect ("Fowler-Nordheim effect") by means of a high voltage pulse Vp which may be of the order of 10 to 20 volts, typically of the order of 13 volts. Injected into or extracted from the gate of the transistor. [0004] This high voltage of 13 volts necessary to program EEPOM memory cannot be reduced and imposes tight constraints on technological process and product reliability. [0005] Indeed, lithography scaling (in other words increasing etch resolution) leads to lower operating v...

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Problems solved by technology

[0010] There is a limit to increasing the duration of the application of erase and program high voltage pulses as this would result in unacceptable program cycles

[0011] Alternative solutions have been conceived, such as for example what is known as a "split-voltage" architecture (according to the term commonly used by those skilled in the art), but generally require complex peripheral circuitry and are notably less suitable for dissipating very little Small memory boards such as those used in radio frequency identification ("RFID") tags or in stand-alone memory

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