Device capable of simultaneously generating photoelectric effect and electroluminescence and making method thereof

Abstract

The invention discloses a device capable of simultaneously generating the photoelectric effect and electroluminescence and a making method thereof. The material is acquired through packaging heterojunction nano rods, specifically, an anisotropy conductive film, an Al electrode, ZnO, the heterojunction nano rods, 7,7',8,8'-tetrafluoro 2,3,5,6-tetracyano- p-quinodimethane and TCNQF4 are included. The invention further discloses a making method of the device.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a device capable of producing photoelectric effect and electroluminescence simultaneously and a preparation method thereof. Background technique [0002] At present, searching for new high-power light sources has become a research hotspot, the most common such as LED light-emitting devices. People keep coming up with new structures to achieve the set goals. For example, the Chinese invention patent CN105742430A provides an LED epitaxial structure, including a substrate, a GaN nucleation layer, a non-doped GaN layer, an N-type GaN layer, a heterojunction layer, and a P-type GaN layer formed on the substrate in sequence. GaN layer; also includes a SiNx layer arranged between the N-type GaN layer and the heterojunction layer, the SiNx layer is formed with a number of penetrating nano-holes. Since the SiNx layer has a nanoporous structure, it can effectively reduce the dislocation den...

AI Technical Summary

Problems solved by technology

[0005] However, at present, with the development of semiconductors, there are already many devices that can produce photoelectric effect, and there are also many devices that can produce electroluminescence. Devices that simultaneously generate photoelectric effect and electroluminescence