Polycrystalline silicon wafer including stacked inverted-pyramid textured face structure and preparation method and application thereof
A technology of polycrystalline silicon wafers and quadrangular pyramids, applied in the field of solar cells, can solve problems such as excessive surface area, inability to effectively improve cell efficiency, and high surface recombination
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0049] 1) Using HF and HNO 3 Treat in the mixed solution at 8±1°C for 3min.
[0050] 2) The polycrystalline silicon wafer is placed in an acidic texturing solution, etched once, and the metal ions are cleaned and removed; wherein, the acidic texturing solution contains 0.1mmol / L of silver ions, 100mmol / L of copper ions, 5.6mol / L L of HF and 1.0mol / L of H 2 o 2 . The etching time for one time is 540s, and the temperature is 27°C.
[0051] 3) Put the polysilicon wafer after the first etching and cleaning into the alkali solution to perform the second etching, and then wash it. Wherein the alkaline solution is a 2% NaOH solution; the time for secondary etching is 180s, and the temperature is 25°C.
Embodiment 2
[0053] 1) Treat with 10wt% KOH solution at 85°C for 150s.
[0054] 2) The polycrystalline silicon wafer is placed in an acidic texturing solution, etched once, and the metal ions are cleaned and removed; wherein, the acidic texturing solution contains 0.49mmol / L of silver ions, 60mmol / L of copper ions, 5.0mol / L L of HF and 0.8mol / L of H 2 o 2 . The etching time for one time is 210s, and the temperature is 28°C.
[0055] 3) Put the polysilicon wafer after the first etching and cleaning into the alkali solution to perform the second etching, and then wash it. The lye is a 1% NaOH solution; the time for secondary etching is 240s, and the temperature is 26°C.
Embodiment 3
[0057] 1) Using HF and HNO 3 Treat in the mixed solution at 8±1°C for 2min.
[0058] 2) The polycrystalline silicon wafer is placed in an acidic texturing solution, etched once, and the metal ions are cleaned and removed; wherein, the acidic texturing solution contains 0.3mmol / L of silver ions, 120mmol / L of copper ions, 3.5mol / L L of HF and 2.0mol / L of H 2 o 2 . The etching time for one time is 240s, and the temperature is 26°C.
[0059] 3) Put the polysilicon wafer after the first etching and cleaning into the alkali solution to perform the second etching, and then wash it. Wherein the alkaline solution is a 3% KOH solution; the time for secondary etching is 150s, and the temperature is 24°C.
PUM
| Property | Measurement | Unit |
|---|---|---|
| Width | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More - R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com



