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Polycrystalline silicon wafer including stacked inverted-pyramid textured face structure and preparation method and application thereof

A technology of polycrystalline silicon wafers and quadrangular pyramids, applied in the field of solar cells, can solve problems such as excessive surface area, inability to effectively improve cell efficiency, and high surface recombination

Pending Publication Date: 2017-09-22
北京普扬科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The porous suede structure can form a graded refractive index layer between the air and the silicon matrix, thereby improving the antireflection performance. However, due to the large surface area and rough surface, many defects are unnecessarily introduced, and the surface recombination is relatively high. , can not effectively improve the battery efficiency

Method used

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  • Polycrystalline silicon wafer including stacked inverted-pyramid textured face structure and preparation method and application thereof
  • Polycrystalline silicon wafer including stacked inverted-pyramid textured face structure and preparation method and application thereof
  • Polycrystalline silicon wafer including stacked inverted-pyramid textured face structure and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0049] 1) Using HF and HNO 3 Treat in the mixed solution at 8±1°C for 3min.

[0050] 2) The polycrystalline silicon wafer is placed in an acidic texturing solution, etched once, and the metal ions are cleaned and removed; wherein, the acidic texturing solution contains 0.1mmol / L of silver ions, 100mmol / L of copper ions, 5.6mol / L L of HF and 1.0mol / L of H 2 o 2 . The etching time for one time is 540s, and the temperature is 27°C.

[0051] 3) Put the polysilicon wafer after the first etching and cleaning into the alkali solution to perform the second etching, and then wash it. Wherein the alkaline solution is a 2% NaOH solution; the time for secondary etching is 180s, and the temperature is 25°C.

Embodiment 2

[0053] 1) Treat with 10wt% KOH solution at 85°C for 150s.

[0054] 2) The polycrystalline silicon wafer is placed in an acidic texturing solution, etched once, and the metal ions are cleaned and removed; wherein, the acidic texturing solution contains 0.49mmol / L of silver ions, 60mmol / L of copper ions, 5.0mol / L L of HF and 0.8mol / L of H 2 o 2 . The etching time for one time is 210s, and the temperature is 28°C.

[0055] 3) Put the polysilicon wafer after the first etching and cleaning into the alkali solution to perform the second etching, and then wash it. The lye is a 1% NaOH solution; the time for secondary etching is 240s, and the temperature is 26°C.

Embodiment 3

[0057] 1) Using HF and HNO 3 Treat in the mixed solution at 8±1°C for 2min.

[0058] 2) The polycrystalline silicon wafer is placed in an acidic texturing solution, etched once, and the metal ions are cleaned and removed; wherein, the acidic texturing solution contains 0.3mmol / L of silver ions, 120mmol / L of copper ions, 3.5mol / L L of HF and 2.0mol / L of H 2 o 2 . The etching time for one time is 240s, and the temperature is 26°C.

[0059] 3) Put the polysilicon wafer after the first etching and cleaning into the alkali solution to perform the second etching, and then wash it. Wherein the alkaline solution is a 3% KOH solution; the time for secondary etching is 150s, and the temperature is 24°C.

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Abstract

The invention relates to texturing structure of silicon wafers and application thereof, in particular to a polycrystalline silicon wafer including stacked inverted-pyramid textured face structure and a preparation method and application thereof, and belongs to the technical field of solar cells. The polycrystalline silicon wafer including stacked inverted-pyramid textured face structure is characterized in that inverted-pyramid sets are distributed randomly on the surface of the wafer and include two or more at least partially stacked inverted pyramids; each inverted-pyramid set also includes combinations of at least partially stacked inverted pyramids and cuboids, and the cuboids are stacked in a direction parallel to the center lines of the inverted pyramids; in addition, the combinations of the at least partially stacked inverted pyramids and cuboids are also stacked.

Description

technical field [0001] The invention relates to a textured structure of a silicon wafer and its application, in particular to a polycrystalline silicon wafer with a textured structure of superimposed inverted pyramids, its preparation method and application, and belongs to the technical field of solar cells. Background technique [0002] Polycrystalline silicon solar cells are an important research direction to reduce the cost of silicon-based solar cells. However, untreated polycrystalline silicon wafers have high reflectivity, resulting in low photoelectric conversion efficiency. Texturing the surface of polysilicon wafers to form a textured structure is an important technical means to solve the above-mentioned drawbacks in recent years. [0003] The structure formed by conventional surface texture treatment tends to have two shapes, one is a regular pyramid or inverted pyramid-shaped suede structure, and the other is a completely irregular "worm" shape or porous like sue...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B33/10H01L31/0236H01L31/18
CPCH01L31/0236H01L31/18C30B29/06C30B33/10Y02E10/50Y02P70/50
Inventor 赵燕王燕陈全胜陈伟吴俊桃刘尧平徐鑫杜小龙
Owner 北京普扬科技有限公司
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