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Sensitive Amplifier Circuit

A technology of sense amplifier and memory circuit, applied in the field of memory, can solve the problem of large loss of sense amplifier circuit, and achieve the effect of low power consumption design

Active Publication Date: 2020-05-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of sense amplifier circuit, to solve the problem that the loss of existing sense amplifier circuit is big

Method used

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Embodiment Construction

[0033] The sense amplifier circuit proposed by the present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0034] The core idea of ​​the present invention is to provide a sense amplifier circuit to solve the problem of large loss in the existing sense amplifier circuit.

[0035] In order to realize the above idea, the present invention provides a sense amplifier circuit, the sense amplifier circuit is connected to a bit line unit of a memory circuit, and the sense amplifier circuit includes a clamp unit, a precharge unit, a current mirror unit and a comparison unit, wherein: the...

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Abstract

The invention provides a sensitive amplifier circuit. The sensitive amplifier circuit is connected with a bit line unit of a memory circuit and comprises a clamping unit, a pre-charging unit, a current mirror unit and a comparing unit, wherein the clamping unit comprises a first transistor and an inverter module; a drain electrode of the first transistor is connected with the pre-charging unit and the current mirror unit; a source electrode of the first transistor is connected with the input end of the inverter module and the bit line unit; the pre-charging unit charges the clamping unit and forms bit line voltage at a connecting part of the source electrode of the first transistor and the bit line unit; a grid electrode of the first transistor is connected with the output end of the inverter module; threshold voltage of the first transistor is smaller than a difference value obtained by subtracting a voltage value of the output end of the inverter module by a value of the bit line voltage.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a sense amplifier circuit. Background technique [0002] The sense amplifier circuit is an important part of the memory, which directly affects the read speed of the memory. The sense amplifier senses small signal changes on the bit line and amplifies the small signal changes to obtain the data stored on the memory cell. Before sensing small signal changes on the bit line, the clamp unit of the sense amplifier will adjust the bit line voltage to a fixed value, so that the bit line voltage can be stabilized as soon as possible, and then a stable bit line current can be sensed during reading. However, in the fields of bank cards and MCUs, the design of the memory must meet the requirements of low power consumption, so the operating voltage of the power supply is also reduced accordingly, which poses certain challenges to the design of the sensitive amplifier. [0003] Therefore, i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/06G11C7/08
CPCG11C7/06G11C7/08
Inventor 徐依然黄明永杨光军胡剑
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP