Control system and control method for diameter of single crystal ingot

Abstract

An embodiment of the present invention relates to a system for controlling the deviation in diameter of a silicon ingot when growing a silicon ingot using the Czochralski method, and the system may comprise: a seed chuck for supporting a silicon ingot which is growing and combined with a seed, also known as a seed crystal; a measuring unit for measuring the load applied to the seed chuck by being connected to the upper surface of the seed chuck via a cable; a load control unit for changing the load applied to a silicon ingot by moving the location of the seed chuck toward the upper or lower portions in a state in which the seed chuck is connected to a cable; and a control unit for controlling the load applied to the silicon ingot by driving the load control unit in accordance with a load value measured at the measuring unit. Accordingly, vibration of the seed is prevented while the growth process of a single crystal ingot is carried out, and thereby the deviation in diameter of a growing single crystal ingot can be reduced.

Description

technical field [0001] The present invention relates to a diameter control system of a single crystal ingot, and more particularly, to a single crystal growth apparatus which prevents inclusion of a seed crystal during growth of a single crystal ingot using the Czochralski method. The part shakes to be able to uniformly control the diameter of the single crystal ingot. Background technique [0002] Generally, by dipping a seed crystal into a silicon melt formed of molten polysilicon and a dopant in a quartz crucible using a pulling device, slowly pulling the seed crystal while rotating the seed crystal and the quartz crucible in opposite directions, Silicon single crystal ingots are produced in the ingot growing device. [0003] The silicon single crystal ingot growing apparatus is formed to include: a quartz crucible filled with a silicon melt in a hot zone (H / Z) within a chamber; a graphite crucible for surrounding the quartz crucible; a support for supporting the crucibl...

AI Technical Summary

Problems solved by technology

[0008] As mentioned above, due to the rapid increase in the pulling speed at the beginning of the growth of the single crystal ingot and the light weight of the initial ingot, the shaking of the seed crystal occurs, which leads to a deviation in the diameter of the grown ingot, which leads to a large diameter of the grown single crystal. The problem of reduced usable area

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