Control system and control method for diameter of single crystal ingot

一种控制系统、单晶锭的技术，应用在单晶生长、单晶生长、化学仪器和方法等方向，能够解决单晶可用面积减少、摇晃、直径偏差等问题，达到防止不均匀生长、防止摇晃、减小直径偏差的效果

Active Publication Date: 2017-09-26
LG SILTRON
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  • Abstract
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  • Claims
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Problems solved by technology

[0008] As mentioned above, due to the rapid increase in the pulling speed at the beginning of the growth of the single crystal ingot and the light weight of the initial ingot, the shaking of the seed crystal occurs, which leads to a deviation in the diameter of the grown ingot, which leads to a large diameter of the grown single crystal. The problem of reduced usable area

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  • Control system and control method for diameter of single crystal ingot
  • Control system and control method for diameter of single crystal ingot
  • Control system and control method for diameter of single crystal ingot

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Embodiment Construction

[0030] Hereinafter, various embodiments will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to these embodiments. In describing the embodiments of the present invention, detailed descriptions of known functions or configurations may be omitted to make the gist of the present invention clearer.

[0031] The present invention provides: a single crystal growth apparatus according to an embodiment of the present invention as a device capable of growing a single crystal ingot by applying an additional load to a seed chuck connected to a seed crystal from the initial growth process of the single crystal ingot and a method of controlling growth conditions while the seed crystal is not shaken due to increasing the weight of the growing single crystal ingot to a certain extent.

[0032] figure 2 is a sectional view showing a single crystal ingot growing apparatus according to the present invention. refer to figure...

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Abstract

An embodiment of the present invention relates to a system for controlling the deviation in diameter of a silicon ingot when growing a silicon ingot using the Czochralski method, and the system may comprise: a seed chuck for supporting a silicon ingot which is growing and combined with a seed, also known as a seed crystal; a measuring unit for measuring the load applied to the seed chuck by being connected to the upper surface of the seed chuck via a cable; a load control unit for changing the load applied to a silicon ingot by moving the location of the seed chuck toward the upper or lower portions in a state in which the seed chuck is connected to a cable; and a control unit for controlling the load applied to the silicon ingot by driving the load control unit in accordance with a load value measured at the measuring unit. Accordingly, vibration of the seed is prevented while the growth process of a single crystal ingot is carried out, and thereby the deviation in diameter of a growing single crystal ingot can be reduced.

Description

technical field [0001] The present invention relates to a diameter control system of a single crystal ingot, and more particularly, to a single crystal growth apparatus which prevents inclusion of a seed crystal during growth of a single crystal ingot using the Czochralski method. The part shakes to be able to uniformly control the diameter of the single crystal ingot. Background technique [0002] Generally, by dipping a seed crystal into a silicon melt formed of molten polysilicon and a dopant in a quartz crucible using a pulling device, slowly pulling the seed crystal while rotating the seed crystal and the quartz crucible in opposite directions, Silicon single crystal ingots are produced in the ingot growing device. [0003] The silicon single crystal ingot growing apparatus is formed to include: a quartz crucible filled with a silicon melt in a hot zone (H / Z) within a chamber; a graphite crucible for surrounding the quartz crucible; a support for supporting the crucibl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/32C30B29/06C30B15/20
CPCC30B15/20C30B15/32C30B29/06Y10T117/1072C30B15/30C30B35/007
Inventor 金润求罗光夏安润河
Owner LG SILTRON
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