GaN transistor and fabrication method thereof
A transistor and gallium nitride technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as reducing device reliability and HEMT device current collapse, improving the current collapse effect and reducing aluminum nitride. The effect of oxygen-dependent trap density on the surface of the gallium barrier layer
Inactive Publication Date: 2017-10-03
PEKING UNIV +2
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Problems solved by technology
[0003] Due to AlGaN / GaN material defects, HEMT devices will have current collapse, which will reduce the reliability of the device
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[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention. The terms "first", "second", "third", "fourth", etc. (if any) in the description and claims of the present invention and the above drawings are used to distinguish similar objects and not necessarily Describe a specific order or sequence. It is to be understood that the data so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein can be practiced in sequences other than those illustrated or describe...
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Abstract
The invention relates to a semiconductor technology, in particular to a GaN transistor and a fabrication method thereof. The GaN transistor comprises a silicon substrate layer, a GaN buffer layer, an AlGaN barrier layer and a silicon nitride passivation layer, wherein the GaN buffer layer is fabricated on a surface of the silicon substrate layer, the AlGaN barrier layer is fabricated on a surface of the GaN buffer layer, the silicon nitride passivation layer is fabricated on a surface of the AlGaN barrier layer, a source, a drain and a grid are arranged on the silicon nitride passivation layer, penetrate through the silicon nitride passivation layer and extend to the surface of the AlGaN barrier layer, and a metal thin layer is arranged between the grid and the AlGaN barrier layer and is used for combining an oxygen-relevant pit. With the GaN transistor and the fabrication method thereof, disclosed by the embodiment of the invention, the current collapse effect of the GaN transistor can be improved.
Description
technical field [0001] The invention relates to semiconductor technology, in particular to a gallium nitride transistor and a manufacturing method thereof. Background technique [0002] With the increasing demand for efficient and complete power conversion circuits and systems, power devices with low power consumption and high-speed characteristics have attracted a lot of attention. Gallium nitride (GaN) is the third generation wide bandgap semiconductor material, because of its large bandgap (3.4eV), high electron saturation rate (2e7cm / s), high breakdown electric field (1e10--3e10V / cm) , high thermal conductivity, corrosion resistance and radiation resistance, and has strong advantages in high-voltage, high-frequency, high-temperature, high-power and radiation-resistant environmental conditions. best material. GaN-based AlGaN / GaN high electron mobility transistor (High Electron Mobility Transistor, HEMT) is a research hotspot in power devices, because a high-concentratio...
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Login to View More IPC IPC(8): H01L29/778H01L29/34H01L21/335
CPCH01L29/7787H01L29/34H01L29/66462
Inventor 刘美华孙辉林信南陈建国
Owner PEKING UNIV