A kind of LED epitaxial structure and preparation method thereof
An epitaxial structure, n-type technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of unstable structure, complicated process, and many impurities, and achieve the effect of small size, large light-emitting area, and reduced dislocation density
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[0036] This embodiment provides a method for preparing an LED epitaxial structure, such as figure 2 As shown, the structure includes a sapphire substrate, a nucleation layer formed on the (111) crystal plane of the substrate, a non-doped GaN layer, a SiN x layer, n-type GaN layer, InGaN / GaN multiple quantum well layer, p-type GaN layer.
[0037] As an embodiment of the present invention, the thickness of the non-doped GaN layer in this embodiment is 1 μm; SiN x The thickness of the layer is 10nm; the thickness of the n-type GaN layer is 3μm; the InGaN / GaN multi-quantum well layer has three well barrier periods; the thickness of the p-type GaN layer is 3μm; the decomposition temperature is 1000°C; the decomposition time is 20min. As an alternative embodiment of the present invention, the thickness of the non-doped GaN layer is 100nm~1μm, SiN x The thickness of the layer is 10nm~100nm, the thickness of the n-type GaN layer is 1μm~3μm, the InGaN / GaN multi-quantum well layer is...
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