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A method of increasing the laser-induced voltage of syco-314 thin film

A technology of SYCO-314 and induced voltage, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of low preparation cost, low enough thin film laser induced voltage, and inability to meet the needs of use , to achieve the effect of simple process, easy operation and low energy consumption

Active Publication Date: 2019-04-12
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The layered structure of SYCO-314 is the layered structure of Sr 3 YCo 4 o 10.5+δ Due to its stable physical properties under high temperature and oxidizing environment, low preparation cost, and non-toxicity, it has attracted extensive attention. Its crystal structure is composed of CoO 6 Octahedral layers and oxygen-deficient CoO 4+δ The tetrahedral layers are arranged alternately along the c-axis, showing the order of the A position, that is, the ab plane and the c-axis direction Sr 2+ and Y 3+ According to the -Sr-Y-Y-Sr-ordered arrangement and the orderly arrangement of oxygen vacancies, and the ab plane and the c-axis direction form a large anisotropy, but the Sr 3 YCo 4 o 10.5+δ Thin film laser induced voltage is not high enough, sometimes it cannot meet the needs of use

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  • A method of increasing the laser-induced voltage of syco-314 thin film
  • A method of increasing the laser-induced voltage of syco-314 thin film

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Experimental program
Comparison scheme
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Embodiment 1

[0017] In this embodiment Sr 3 YCo 4 o 10.5+δ The preparation of thin film specifically comprises the following steps:

[0018] (1) Sr 3 YCo 4 o 10.5+δ Preparation of polycrystalline target: Weigh the raw material SrCO according to the chemical formula ratio Sr:Y:Co=3:1:4 3 , Y 2 o 3 ,Co 3 o 4 , Grinding and mixing, press molding, and perform primary sintering: heat up to 1180°C at a heating rate of 5°C / min and sinter for 900 minutes, regrind and press molding after cooling, and perform secondary sintering: heat up to 1180°C at a heating rate of 5°C / min Sintering at ℃ for 540min, cooling to obtain polycrystalline target Sr 3 YCo 4 o 10.5+δ ;

[0019] (2) Sr 3 YCo 4 o 10.5+δ Preparation of tilted thin films: by pulsed laser deposition technology, a KrF excimer laser source with a wavelength of 248nm and a laser pulse width of 28ns, with a laser energy of 200mJ, a laser frequency of 4Hz, and a background vacuum of 1×10 -4 Pa, growth temperature 760°C, growth flo...

Embodiment 2

[0022] This embodiment increases Sr 3 YCo 4 o 10.5+δ thin-film laser-induced voltage method in Sr 3 YCo 4 o 10.5+δ Doping Ca into the target and preparing it into a thin film, specifically includes the following steps:

[0023] (1) Sr 2.95 Ca 0.05 YCo 4 o 10.5+δ Preparation of polycrystalline target: Weigh the raw material SrCO according to the chemical formula ratio Sr:Ca:Y:Co=2.95:0.05:1:4 3 , CaCO 3 , Y 2 o 3 ,Co 3 o 4 , Grinding and mixing, press molding, and perform primary sintering: heat up to 1180°C at a heating rate of 5°C / min and sinter for 900 minutes, regrind and press molding after cooling, and perform secondary sintering: heat up to 1180°C at a heating rate of 5°C / min Sintering for 540min, cooling to obtain Ca-doped polycrystalline target Sr 2.95 Ca 0.05 YCo 4 o 10.5+δ ;

[0024] (2) Sr 2.95 Ca 0.05 YCo 4 o 10.5+δ Preparation of tilted thin films: by pulsed laser deposition technology, a KrF excimer laser source with a wavelength of 248nm a...

Embodiment 3

[0027] This embodiment increases Sr 3 YCo 4 o 10.5+δ thin-film laser-induced voltage method in Sr 3 YCo 4 o 10.5+δ Doping Ca into the target and preparing it into a thin film, specifically includes the following steps:

[0028] (1) Sr 2.90 Ca 0.1 YCo 4 o 10.5+δ Preparation of polycrystalline target: Weigh the raw material SrCO according to the chemical formula ratio Sr:Ca:Y:Co=2.90:0.1:1:4 3 , CaCO 3 , Y 2 o 3 ,Co 3 o 4 , after grinding and mixing, press molding, and perform primary sintering: heat up to 1180°C at a heating rate of 5°C / min and sinter for 900 minutes, regrind and press molding after cooling, and perform secondary sintering: heat up to 1180°C at a heating rate of 5°C / min Sintering for 540min, cooling to obtain Ca-doped polycrystalline target Sr 2.90 Ca 0.1 YCo 4 o 10.5+δ ;

[0029] (2) Sr 2.90 Ca 0.1 YCo 4 o 10.5+δ Preparation of tilted thin films: by pulsed laser deposition technology, a KrF excimer laser source with a wavelength of 248nm...

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Abstract

The invention discloses a method for increasing laser-induced voltage of an SYCO314 film, and belongs to the field of a functional film material. The method comprises the steps of mixing Ca in an Sr3YCo4O10.5+delta target material, preparing an Sr3-xCaxYCo4O10.5+delta epitaxial film on a c-axis-tilted single crystal substrate through an Sr3-xCaxYCo4O10.5+delta polycrystalline target material for pulsed laser deposition, and thus obtaining the film with increased laser-induced voltage. The method can significantly increase the laser-induced voltage of the Sr3YCo4O10.5+delta film and has the advantages of good repeatability and easy realization.

Description

technical field [0001] The invention relates to a method for increasing the laser-induced voltage of a SYCO-314 thin film, belonging to the field of functional thin film materials. Background technique [0002] The laser induced voltage (Laser Induced Voltage, LIV) signal is the thermoelectric effect caused by the anisotropy of the Seebeck tensor of the material. That is, when the laser irradiates the surface of the film, a temperature gradient along the film thickness direction will be generated, and a transverse thermoelectric voltage signal will be obtained on the film surface. The LIV signal is not only related to the anisotropy of the crystal, but also related to the tilt angle of the film. The LIV effect can be applied to laser detection and analysis, temperature measurement, thermal fluid measurement, etc. [0003] The layered structure of SYCO-314 is the layered structure of Sr 3 YCo 4 o 10.5+δ Due to its stable physical properties under high temperature and oxi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/08
CPCC23C14/08C23C14/28
Inventor 虞澜胡建力宋世金刘安安黄杰
Owner KUNMING UNIV OF SCI & TECH