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Image sensor structure and preparation method thereof

An image sensor and structure layer technology, applied in the field of image sensors, can solve the problems affecting the detection sensitivity of infrared image sensors, the difference in thermal noise between blind element arrays and pixel arrays, etc., so as to improve chip integration and device sensitivity, and reduce detection. error, the effect of improving detection sensitivity

Active Publication Date: 2017-10-27
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Claims
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Problems solved by technology

[0003] However, in the structure of the traditional infrared image sensor, since the blind element array and the pixel array are not in the same area, the environment of the blind element array and the pixel array is not the same, which will lead to the difference between the blind element array and the pixel array. The difference in thermal noise ultimately affects the detection sensitivity of infrared image sensors

Method used

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  • Image sensor structure and preparation method thereof
  • Image sensor structure and preparation method thereof
  • Image sensor structure and preparation method thereof

Examples

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Embodiment 1

[0033] The following is attached Figure 1-12 The present invention will be described in further detail with specific examples. in, figure 1 , 3 The thin-line triangles in sums 6-12 indicate that the effective pixel is approximately triangular in shape, but this is not used to limit the protection scope of the present invention. It should be noted that the drawings are all in a very simplified form, using imprecise scales, and are only used to facilitate and clearly achieve the purpose of assisting in describing the present embodiment.

[0034] see figure 1 and figure 2 , figure 2 for figure 1 Schematic diagram of the cross-sectional structure along the AA' direction. In an image sensor structure of this embodiment, each effective pixel in the effective pixel array includes: a detection structure layer 01 and a blind cell structure layer 02 . Here, the detection structure layer 01 and the blind cell structure layer 02 are arranged side by side, and of course they can...

Embodiment 2

[0047] The following is attached Figures 13 to 23 The present invention will be described in further detail with specific examples. in, Figure 13 The thin line triangles in the mean that the shape of the effective pixel is approximately triangular, and, in order to clearly express the morphology of the detection structure layer and the blind cell structure layer, the concave part of the blind cell structure layer is represented as white, but this is not used to limit this protection scope of the invention. It should be noted that the drawings are all in a very simplified form, using imprecise scales, and are only used to facilitate and clearly achieve the purpose of assisting in describing the present embodiment.

[0048] see Figures 13 to 15 The difference between the effective pixel in the second embodiment and the effective pixel in the first embodiment is that a blind pixel structure layer 202 is arranged inside the surface of the detection structure layer 201 instea...

Embodiment 3

[0059] The following is attached Figures 24 to 29 The present invention will be described in further detail with specific examples. It should be noted that the drawings are all in a very simplified form, using imprecise scales, and are only used to facilitate and clearly achieve the purpose of assisting in describing the present embodiment.

[0060] The difference between the third embodiment and the first and second embodiments is that the detection structure layer and the blind element structure layer are stacked up and down. Specifically, see Figure 26 , in the effective pixel structure, the blind pixel structure layer 302 is located on the sidewall and top of the detection structure layer 301 , that is, the blind pixel structure layer 302 covers the detection structure layer 301 . the following Figure 24 and 25 for Figure 19 The enlarged cross-sectional schematic diagram of the area shown by the dotted circle in , at this time, the preparation of the blind cell st...

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Abstract

The invention provides an image sensor structure and a preparation method thereof. A detection structural layer and a blind pixel structural layer are designed to be vertically stacked, and both the detection structural layer and the blind pixel structural layer are formed by ion injection, so that the detection structural layer and the blind pixel structural layer are effectively combined, a space ratio of a unit pixel is reduced, a chip integration level and device sensitivity are improved, environments where a blind pixel array and an array are placed are the same, and thus detection sensitivity is further improved and a detection error is reduced.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to an image sensor structure and a preparation method thereof. Background technique [0002] In the traditional infrared image sensor chip design, the blind element array and the effective pixel array are not in the same area at all. Usually, one row (or several rows) or one column (or several columns) are arranged outside the effective pixel array to design blind elements. array, and share the blind element structure through the control signal in the same column, and eliminate the influence of thermal noise on the sensitivity through the difference in infrared heat sensitivity between the blind element array and the pixel array. [0003] However, in the structure of the traditional infrared image sensor, since the blind element array and the pixel array are not in the same area, the environment of the blind element array and the pixel array is not the same, which will lead to...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/146H01L27/14601H01L27/14634
Inventor 康晓旭
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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