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Atomic layer deposition of protective coatings for semiconductor process chamber components

A technology of atomic layer deposition and process chamber, which is applied in semiconductor/solid-state device manufacturing, coating, plating of superimposed layers, etc., and can solve problems such as erosion and adding chamber components

Active Publication Date: 2017-11-03
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These extreme conditions can corrode chamber components, corrode chamber components, and increase chamber component susceptibility to defects

Method used

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  • Atomic layer deposition of protective coatings for semiconductor process chamber components
  • Atomic layer deposition of protective coatings for semiconductor process chamber components
  • Atomic layer deposition of protective coatings for semiconductor process chamber components

Examples

Experimental program
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Effect test

example 1

[0076] Example 1 - Formation of YO from yttrium oxide and yttrium fluoride monolayers x f y coating

[0077] The first layer can be made of tris(N,N-bis(trimethylsilyl)amide)yttrium(III), tris(cyclopentadienyl)yttrium(III), tris(butylcyclopentadiene) using ALD Alkenyl) yttrium (III), or a precursor of tris (2,2,6,6-tetramethyl-3,5-heptanedionate) yttrium (III) and selected from H 2 O, O 2 , or O 3 A monolayer of yttrium oxide grown from the second precursor. The second layer can be prepared using ALD from the precursors namely tris(2,2,6,6-tetramethyl-3,5-heptanedionate)yttrium(III) and TiF 4 Yttrium fluoride monolayer grown in a single combination. The resulting multi-component coating can include YO x f y , where x and y depend on the number of repetitions of the first and second layers.

example 2

[0078] Example 2 - Formation of YAl from yttria and alumina monolayers x o y coating

[0079] The first layer can be made of tris(N,N-bis(trimethylsilyl)amide)yttrium(III), tris(cyclopentadienyl)yttrium(III), tris(butylcyclopentadiene) using ALD Alkenyl) yttrium (III), or a precursor of tris (2,2,6,6-tetramethyl-3,5-heptanedionate) yttrium (III) and selected from H 2 O, O 2 , or O 3 A monolayer of yttrium oxide grown from the second precursor. The second layer can be made of aluminum diethylethoxide, aluminum tris(ethylmethylamido), aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triethylaluminum, triisobutylate using ALD. A precursor of aluminum, trimethylaluminum, or tris(diethylamido)aluminum and selected from H 2 O, O 2 , or O 3 A monolayer of alumina grown from the second precursor. The resulting multi-component coating can include YAl x o y , where x and y depend on the number of repetitions of the first and second layers.

[0080] In some e...

example 3

[0084] Example 3 - Formation of YZr from yttria and zirconia monolayers x o y coating

[0085] The first layer can be made of tris(N,N-bis(trimethylsilyl)amide)yttrium(III), tris(cyclopentadienyl)yttrium(III), tris(butylcyclopentadiene) using ALD Alkenyl) yttrium (III), or a precursor of tris (2,2,6,6-tetramethyl-3,5-heptanedionate) yttrium (III) and selected from H 2 O, O 2 , or O 3 A monolayer of yttrium oxide grown from the second precursor. The second layer can be made of zirconium(IV) bromide, zirconium(IV) chloride, zirconium(IV) tert-butoxide, tetrakis(diethylamido)zirconium(IV), tetrakis(dimethylamido)zirconium(IV) using ALD Precursors of zirconium (IV) amido) or tetrakis (ethylmethylamido) zirconium (IV) and selected from H 2 O, O 2 , or O 3 Zirconia monolayer grown from the second precursor. The resulting multi-component coating can include YZr x o y , where x and y depend on the number of repetitions of the first and second layers.

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Abstract

The invention relates to atomic layer deposition of protective coatings for semiconductor process chamber components. A multi-component coating composition for a surface of a semiconductor process chamber component comprising at least one first film layer of a yttrium oxide or a yttrium fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process and at least one second film layer of an additional oxide or an additional fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process, wherein the multi-component coating composition is selected from the group consisting of YOxFy, YAlxOy, YZrxOy and YZrxAlyOz.

Description

[0001] related application [0002] This application claims priority to pending US Provisional Patent Application 62 / 328,588, filed April 27, 2016, which is incorporated herein by reference. technical field [0003] Embodiments of the present disclosure relate to methods for preparing protective coatings for semiconductor process chamber components using atomic layer deposition (ALD), multi-component protective coatings, and semiconductor processes coated with multi-component protective coatings chamber parts. Background technique [0004] Various manufacturing processes expose semiconductor process chamber components to high temperatures, high energy plasmas, mixtures of corrosive gases, high stresses, and combinations thereof. These extreme conditions can erode chamber components, corrode chamber components, and increase chamber component susceptibility to defects. It is desirable to reduce these defects and improve the erosion and / or corrosion resistance of components i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/40C23C16/30
CPCC23C16/30C23C16/403C23C16/405C23C16/45544C23C16/45563C23C16/40C23C16/45531C23C28/042C23C16/4404C23C16/45529H01L21/02205H01L21/0228C23C16/4408
Inventor D·芬威克J·Y·孙
Owner APPLIED MATERIALS INC
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