A method for growing free-standing gallium nitride single crystals by hydrothermally etching porous substrates

Abstract

The invention discloses a method for hydrothermal corrosion porous substrate growth self-support gallium nitride single crystal. The method comprises the following steps: (1) preparing a hydrothermal corrosion solution, putting into a hydrothermal kettle, putting GaN crystal with the Ga side facing upwards into the hydrothermal kettle, and sealing the hydrothermal kettle; (2) performing a heating reaction on the hydrothermal kettle, and allowing standing still for cooling after the reaction is completed; (3) cooling the hydrothermal kettle to the room temperature, opening the kettle, taking out the GaN crystal, cleaning the GaN crystal, and drying with blown air so as to obtain GaN crystal after hydrothermal reaction corrosion; (4) performing displacement density and distribution representation on the GaN crystal. By adopting the hydrothermal corrosion method, clear corrosion patterns are formed on the surface of a sample, and by virtue of a vacancy auxiliary separation principle, while the GaN single crystal is grown from a prepared porous substrate in later process, the stress of the crystal can be relieved, and self peeling of the crystal can be achieved. Compared with the prior art, the method has the characteristics of being simple in process, convenient to operate, low in cost and good in practicability, and has the advantages of being gentle in reaction condition, simple and convenient to operate, uniform in aperture and the like.

Description

technical field [0001] The invention relates to a method for hydrothermally corroding a porous substrate to grow a self-supporting gallium nitride (GaN) single crystal. The method is simple, convenient, direct and easy to operate, can prepare porous substrates used for growing self-supporting GaN crystals, and belongs to the field of optoelectronic technology. Background technique [0002] GaN is a very important third-generation semiconductor, which has the characteristics of large band gap, high electron mobility, high electron saturation velocity, acid and alkali resistance, and high temperature resistance. These excellent properties make it widely used in LED lighting, semiconductor lasers, solar cells, transistors, microwave devices, phased array radars, full-color displays, and data storage. However, due to the lack of homoepitaxial substrates, most GaN crystals are heteroepitaxially grown, which brings a high dislocation density to the grown GaN crystals. At the sam...

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Problems solved by technology

These methods have played a certain role in generating high-quality GaN single crystals, but the process is relatively complicated, and many auxiliary instruments and equipment are needed, which is not conducive to popularization and use. The technology for preparing GaN porous substrates by hydrothermal corrosion of the present invention is a good solution problem in this regard

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