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Buried-layer epitaxial super-junction diode and fabrication method thereof

A manufacturing method and diode technology, which are applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of high manufacturing cost of devices, difficulty in meeting the requirements of withstand voltage and leakage current of superjunction diodes, and improve performance, reduce The effect of small leakage and simple process

Active Publication Date: 2017-11-17
叶豪
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  • Claims
  • Application Information

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Problems solved by technology

However, the withstand voltage and leakage current of the super junction diodes obtained by the existing manufacturing process are difficult to meet the requirements, and the device manufacturing cost is relatively high

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  • Buried-layer epitaxial super-junction diode and fabrication method thereof
  • Buried-layer epitaxial super-junction diode and fabrication method thereof
  • Buried-layer epitaxial super-junction diode and fabrication method thereof

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Embodiment Construction

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0034] In order to solve the problems existing in the super junction diodes of the prior art, the present invention provides a buried layer epitaxial super junction diode, which adopts a buried layer super junction structure, uses an N-type epitaxial wafer, and forms a P-type epitaxial wafer by etching trenches and ion implantation. buried layer. When working in the forward direction, the current flows to the substrate through the N-type epitaxy; when working in the reverse direction, the depletion layer of the P-typ...

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Abstract

The invention provides a buried-layer epitaxial super-junction diode and a fabrication method thereof. The fabrication method of the buried-layer epitaxial super-junction diode comprises the steps of forming a P-type buried layer on a first N-type epitaxial layer; fabricating a second N-type epitaxial layer on a surface of the first N-type epitaxial layer, and forming a groove; performing P-type injection on the groove of the second N-type epitaxial layer, and forming a P-type injection region on the second N-type epitaxial layer; forming a P-type epitaxial layer on a surface of the second N-type epitaxial layer, wherein the P-type epitaxial layer is in contact with the P-type injection region of the second N-type epitaxial layer; and activating injected ions of the P-type buried layer of the first N-type epitaxial layer and the p-type injection region of the second N-type epitaxial layer by annealing, and extending the P-type injection region to be in contact with the P-type buried layer after annealing. The fabrication method of the buried-layer epitaxial super-junction diode, provided by the invention, is simple in process, the manufacturing cost of the device can be effectively reduced, and the performance of the device is improved.

Description

【Technical field】 [0001] The present invention relates to the technical field of semiconductor chip manufacturing technology, specifically the field of power device manufacturing process; in particular, it relates to a buried layer epitaxial super junction diode and a method for manufacturing the buried layer epitaxial super junction diode. 【Background technique】 [0002] Power diodes are key components of circuit systems, and are widely used in high-frequency inverters, digital products, generators, televisions and other civilian products, as well as satellite receivers, missiles and aircraft and other advanced weapon control systems and instrumentation equipment. Military occasions. Power diodes are expanding in two important directions: [0003] (1) Developing to tens of millions or even tens of thousands of amperes, it can be applied to high-temperature arc wind tunnels, resistance welding machines and other occasions; [0004] (2) The reverse recovery time is getting ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L29/861H01L29/06
CPCH01L29/0634H01L29/6609H01L29/861
Inventor 张正宇
Owner 叶豪