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Isolation structure and production method thereof

A technology of isolation structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of poor hole filling ability of flowable dielectrics, easy occurrence of particles, etc., so as to improve the performance of hole filling ability, Improve particle, avoid excessive stress effect

Inactive Publication Date: 2017-11-24
RUILI INTEGRATED CIRCUIT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide an isolation structure and a manufacturing method thereof, which are used to solve the problem of particles easily appearing in the curing process of the flowable dielectric in the prior art, and the filling of the flowable dielectric The problem of poor hole ability

Method used

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  • Isolation structure and production method thereof
  • Isolation structure and production method thereof
  • Isolation structure and production method thereof

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Embodiment 1

[0072] The present invention provides a method for manufacturing an isolation structure, please refer to image 3 , is shown as a process flow chart of the method, comprising the steps:

[0073] Step S1 is first performed: providing a semiconductor substrate, the semiconductor substrate has a first surface and a second surface opposite to the first surface.

[0074] Specifically, the semiconductor substrate is a common semiconductor substrate. In this embodiment, the semiconductor substrate is an Si substrate as an example.

[0075] Step S2 is then performed: forming at least one trench in the substrate to define an active region, the trench forming an opening from the first surface and extending toward the second surface.

[0076] Specifically, first, a mask pattern of a groove is formed on the first surface of the semiconductor substrate by using photolithography techniques such as exposure and development, and then based on the mask pattern, a dry or wet etching technique ...

Embodiment 2

[0109] The present invention also provides an isolation structure, such as Figure 9 As shown, a schematic diagram of the isolation structure is shown, including:

[0110] A semiconductor substrate 201 has a first surface and a second surface opposite to the first surface, wherein at least one trench is formed in the semiconductor substrate 201 to define an active region, the trench forming an opening from the first surface and extending toward the second surface;

[0111] a liner layer 202 deposited on the sidewalls and bottom of the trench; and

[0112] A flowable dielectric is formed on the surface of the liner layer 202, the flowable dielectric fills the trench, and more than 90wt% of the flowable dielectric in the trench reacts as an oxide Isolator 203.

[0113] Specifically, the semiconductor substrate 201 includes but is not limited to a silicon substrate, the trench has an aspect ratio ranging from 14 to 18, and the material of the pad layer 202 includes at least on...

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Abstract

The invention provides an isolation structure and a production method thereof. The method includes the following steps that a semiconductor substrate is provided; at least one trench is formed in the semiconductor substrate; laying is deposited on the side wall and bottom surface of each trench; flowable dielectric is formed on the surface of the laying, and the flowable dielectric is subjected to stepwise heating solidification, wherein the solidification temperature of stepwise heating at least contains two types of solidification temperature increasing progressively in a stepwise mode, so that 90 wt% or above of the flowable dielectric in the trenches is reacted to produce oxide isolator. By means of the production method, rapid solidification of the flowable dielectric on the upper portions of the trenches due to a rapid solidification reaction can be avoided, appearance of pores in the dielectric is avoided, and excessive stress of thin dielectric film caused by excessive solidification is avoided. After solidification is completed, the content of the total number of Si-H bonds, Si-N bonds and N-H bonds in the thin dielectric film is about 2-5%. By means of the production method, the phenomenon that particles appear in the solidification process of the flowable dielectric can be improved, and the performance of the pore filling capacity of the flowable dielectric is improved.

Description

technical field [0001] The invention belongs to the field of integrated circuit manufacturing, and relates to an isolation structure and a manufacturing method thereof. Background technique [0002] As the line width of semiconductors gradually shrinks to less than 20nm, flowable dielectrics have been widely used in trench filling and dielectric isolation because of their better hole-filling capabilities. [0003] There are following problems in the prior art: [0004] 1. When the flowable dielectric undergoes a curing reaction (when the solvent is removed), a large amount of outgassing will occur. Such as Figure 1a and Figure 1b As shown, if the released gas cannot be extracted immediately, the released gas 101 will deposit on the wafer 102 and condense into particles. [0005] 2. If figure 2 As shown, when the flowable dielectric undergoes curing reaction, if it is in an inappropriate reaction environment (instantaneously high reaction temperature, a large amount of...

Claims

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Application Information

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IPC IPC(8): H01L21/762
CPCH01L21/76224
Inventor 不公告发明人
Owner RUILI INTEGRATED CIRCUIT CO LTD
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