Semiconductor device and preparation method thereof
A technology for semiconductors and devices, applied in the field of semiconductor devices and their preparation, can solve problems such as unstable performance of GaN semiconductor devices, and achieve the effect of improving service life and stable performance
Active Publication Date: 2017-12-01
DYNAX SEMICON
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Problems solved by technology
[0004] In view of this, an embodiment of the present invention provides a semiconductor device and a manufacturing method thereof to solve the technical problem of unstable performance of GaN semiconductor devices in the prior art
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[0072] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be fully described below through specific implementation in combination with the drawings in the embodiments of the present invention. Apparently, the described embodiments are some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts, All fall within the protection scope of the present invention.
[0073] The present invention mainly forms a first protective layer on at least two electrodes, forms a second protective layer on the multi-layer semiconductor layer between at least two electrodes, and forms a second protective layer on the electrode sidewall between at least two electrodes, through the first The first protective layer and the second protective...
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The embodiment of the invention discloses a semiconductor device and a preparation method thereof, wherein the semiconductor device comprises a substrate base plate, a multilayer semiconductor layer, at least two electrodes, a first protection layer and a second protection layer, wherein the multilayer semiconductor layer is positioned on the substrate base plate; the at least two electrodes are positioned at one side, far away from the substrate base plate, on the multilayer semiconductor layer; the first protection layer is positioned at one side, far away from the multilayer semiconductor layer, on the at least two electrodes; the second protection layer is positioned on the multilayer semiconductor layer between the at least two electrodes and on the electrode side walls between the at least two electrodes; and the second protection layer is made of hydrophobic materials. By adopting the technical scheme, the first protection layer is formed on the at least two electrodes; the second layer is formed on the multilayer semiconductor layer and the electrode side walls between the at least two electrodes; the stable performance of the semiconductor device is ensured through the first protection layer and the second protection layer; and the service life of the semiconductor device is prolonged.
Description
technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Gallium nitride (GaN) semiconductor devices have significant advantages such as large band gap, high electron mobility, high breakdown field strength, and high temperature resistance. Compared with the first-generation semiconductor silicon and the second-generation semiconductor gallium arsenide, it is more suitable It has broad application prospects for making high-temperature, high-voltage, high-frequency and high-power electronic devices. [0003] GaN semiconductor devices usually encounter some high-temperature and high-humidity environments in practical applications. In this environment, when the semiconductor device is in operation for a long time, water vapor in the air will enter the interior of the device, resulting in relatively weak materials insid...
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IPC IPC(8): H01L29/06H01L29/20H01L21/336
CPCH01L29/06H01L29/0684H01L29/2003H01L29/66477H01L29/78
Inventor 刘健吴星星
Owner DYNAX SEMICON