Heating cavity and semiconductor processing equipment
A technology for heating chambers and chambers, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high heat dissipation rate, temperature difference, and reduce process uniformity, so as to achieve uniform heating and improve process uniformity. Effect
Active Publication Date: 2017-12-05
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF3 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] In the process of heating the substrate 3, since the distribution of the heating bulbs 5 located in the central area of the upper subchamber 11 is more concentrated than that in the edge area, the heat radiated to the central area of the substrate is more than the heat radiated to the edge area of the substrate. , and because the heat loss rate in the edge region of the substrate 3 is higher than that in the center region, there is a temperature difference between the center region and the edge region of the substrate 3, thereby reducing the process uniformity
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0028] In order for those skilled in the art to better understand the technical solution of the present invention, the heating chamber and semiconductor processing equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.
[0029] figure 2 A cross-sectional view of a heating chamber provided for an embodiment of the present invention. see figure 2 A dielectric window 24 is provided in the heating chamber 21 to separate the heating chamber 21 to form an upper sub-chamber 211 and a lower sub-chamber 212. The dielectric window 24 is usually made of transparent quartz material. Wherein, a bearing part 22 is arranged in the lower sub-chamber 212, and the bearing part 22 may specifically be a base or a plurality of supporting columns. In this embodiment, the supporting part 22 adopts a plurality of supporting columns to support the substrate 23, and the supporting The top of the column is the carrying surface for c...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a heating cavity and semiconductor processing equipment. A dielectric window is arranged in the heating cavity and is used for partitioning the heating cavity to form an upper sub-cavity and a lower sub-cavity, a bearing part is arranged in the lower sub-cavity and comprises a bearing surface, the bearing surface is used for bearing a substrate, a plurality of heating lamps are arranged in the upper sub-cavity and are used for irradiating heat towards the bearing surface through the dielectric window, and the vertical distance between each heating lamp and the bearing surface is different so that the heat irradiated on different regions of the substrate arranged on the bearing surface tend to be consistent. With the heating cavity provided by the invention, the substrate can be more uniformly heated, so that the process uniformity can be improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a heating chamber and semiconductor processing equipment. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) technology is a commonly used processing technology in the field of microelectronics, for example, it is used to process copper interconnect layers in integrated circuits. The production of copper interconnection layer mainly includes the steps of degassing, pre-cleaning, Ta(N) deposition, and Cu deposition. The degassing step is to remove water vapor and other volatile impurities on the substrate and other processed workpieces. In practical applications, the uniformity of heating in the degassing step is highly required. If the heating is not uniform, volatile impurities on some areas on the surface of the substrate may not be removed cleanly, affecting subsequent processes. [0003] fi...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L21/67
CPCH01L21/67011H01L21/67115
Inventor 边国栋
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD