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Indium tin oxide rotating target material sintering method

A technology of indium tin oxide and sintering method, which is applied in the field of sintering of indium tin oxide rotating targets, can solve problems such as difficult quality assurance, achieve small deformation, meet processing requirements, and be suitable for mass production

Active Publication Date: 2017-12-12
洛阳晶联光电材料有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The indium tin oxide rotary target prepared by splicing not only needs to add an additional splicing process in the preparation process, but also its quality is more difficult to guarantee compared with the one-piece molding sintering process, so it is necessary to develop a long-sized indium tin oxide rotary target. Target method

Method used

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  • Indium tin oxide rotating target material sintering method
  • Indium tin oxide rotating target material sintering method
  • Indium tin oxide rotating target material sintering method

Examples

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Embodiment 1

[0026] Cold isostatic pressing is used to form an elliptical tubular indium tin oxide target blank with a length of 800mm, a wall thickness of 14mm, an elliptical section, an inner ellipse major axis 188mm, a minor axis 145mm, and a major and minor axis ratio of 1.3. On the setter plate of the sintering furnace, two rows of stoppers are placed in parallel, the length of each row of stoppers is 800mm, and the interval between the two rows of stoppers is 193mm. Then lay the oval tubular blank in the middle of the two rows of stoppers, with the long axis perpendicular to the bearing plate. Alumina sand with a purity of 99.95% is filled between the stopper and the blank, the filling height is 1 / 3 of the long axis of the outer ellipse of the blank, and then the temperature is increased to degreasing and sintering. After the sintering is completed, an indium tin oxide rotating target with a length of 644mm, an inner diameter of 132.1~132.2mm, and an outer diameter of 154.8~156.0mm wi...

Embodiment 2

[0028] Using cold isostatic pressing, an elliptical tubular indium tin oxide target blank with a length of 800mm, a wall thickness of 14mm, an elliptical section, an inner ellipse major axis of 168mm, a minor axis of 140mm, and a major and minor axis ratio of 1.2, is formed. On the setter plate of the sintering furnace, two rows of stoppers are placed in parallel, the length of each row of stoppers is 800mm, and the interval between the two rows of stoppers is 228mm. Then lay the oval tubular blank in the middle of the two rows of stoppers, with the long axis perpendicular to the bearing plate. Alumina sand with a purity of 99.95% is filled between the stopper and the blank, the filling height is 1 / 4 of the long axis of the outer ellipse of the blank, and then the temperature is raised to degreasing and sintering. After the sintering is completed, an indium tin oxide rotating target with a length of 645mm, an inner diameter of φ122.4~123.6mm, and an outer diameter of φ144.4~145...

Embodiment 3

[0030] Cold isostatic pressing is used to form an elliptical tubular indium tin oxide target blank with a length of 1500mm, a wall thickness of 14mm, an elliptical section, an inner ellipse major axis of 168mm, a minor axis of 140mm, and a major to minor axis ratio of 1.2. On the setter plate of the sintering furnace, two rows of stoppers are placed in parallel, the length of each row of stoppers is 1500mm, and the distance between the two rows of stoppers is 228mm. Then lay the oval tubular blank in the middle of the two rows of stoppers, with the long axis perpendicular to the bearing plate. Alumina sand with a purity of 99.95% is filled between the stopper and the blank, the filling height is 1 / 4 of the long axis of the outer ellipse of the blank, and then the temperature is raised to degreasing and sintering. After the sintering is completed, an indium tin oxide rotating target with a length of 1203mm, an inner diameter of φ122.1~123.3mm, and an outer diameter of φ144.6~146...

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Abstract

The invention relates to an indium tin oxide rotating target material sintering method. The indium tin oxide rotating target material sintering method comprises the following steps: (1) forming a tubular indium tin oxide target material biscuit of which the cross section is elliptical; (2) placing two rows of stop blocks on a burning bearing board of a sintering furnace, wherein the distance between the two rows of stop blocks is 20-100 mm larger than the minor axis of the external ellipse of the elliptical indium tin oxide target material biscuit; and (3) lying the formed indium tin oxide target material biscuit between the two rows of stop blocks to enable the elliptical long axis of the indium tin oxide target material biscuit to be perpendicular to the burning bearing board, then filling the gaps between two sides of the indium tin oxide target material biscuit and the stop blocks with aluminium oxide sand, and at last, raising the temperature to perform degreasing and sintering to obtain an indium tin oxide rotating target material. As lying sintering is adopted, the length of the rotating target material is restricted by not the height of the sintering furnace but the length of the sintering furnace; and the elliptical biscuit structure is adopted to cancel most sintering deformation, so that sintering deformation is small, and the indium tin oxide rotating target material sintering method is suitable for batch production of long indium tin oxide rotating target materials.

Description

Technical field [0001] The invention relates to a sintering method of an indium tin oxide rotating target material. Background technique [0002] Indium tin oxide target is a sputtering source for magnetron sputtering plating indium tin oxide film, and it is the raw material of indium tin oxide film. Indium tin oxide film is a transparent conductive film, mainly used to make transparent electrodes, and is widely used in flat panel displays, touch screens and other fields. At present, indium tin oxide flat targets are widely used, and the utilization rate of indium tin oxide flat targets is low, below 35%. The indium tin oxide rotating target is tubular. Due to its high utilization rate, between 50-80%, it has begun to be widely used in low-end indium tin oxide film products. [0003] Most of the currently published literatures and patents related to the manufacture of rotating target materials focus on forming methods and sintering temperature processes, and few involve sintering...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/457C04B35/01C04B35/622C04B35/64
CPCC04B35/01C04B35/457C04B35/622C04B35/64C04B2235/3286C04B2235/3293
Inventor 陆映东武建良马超宁黄誓成
Owner 洛阳晶联光电材料有限责任公司